Substrate processing method and substrate processing apparatus

Abstract

A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.

1 . A method for processing a substrate comprising the steps of: 
 (a) forming at least a predetermined pattern on the substrate;    (b) performing a treatment using an aqueous solution on the substrate after the step (a); and    (c) radiating a beam with a wavelength shorter than that of a visible ray on the substrate.    
     
     
         2 . The method as set forth in  claim 1 , 
 wherein the step (b) is a cleaning step cleaning the substrate with a cleaning solution.    
     
     
         3 . The method as set forth in  claim 1 , 
 wherein the step (c) is performed after the step (b).    
     
     
         4 . The method as set forth in  claim 3 , 
 wherein the step (c) is performed in a state that the aqueous solution remains between the patterns.    
     
     
         5 . The method as set forth in  claim 3 , 
 wherein the step (c) is a radiation step radiating the substrate with a bean so that the beam removes the aqueous solution remained in the pattern at a predetermined depth thereof.    
     
     
         6 . The method as set forth in  claim 3 , further comprising the step of: 
 adjusting a surface tension on the pattern before the step (c).    
     
     
         7 . The method as set forth in  claim 6 , 
 wherein said adjusting step has a step to supply a surface-active agent on the pattern.    
     
     
         8 . The method as set forth in  claim 1 , 
 wherein the bean is an electron beam.    
     
     
         9 . The method as set forth in  claim 1 , 
 wherein the beam is an ultraviolet ray.    
     
     
         10 . A method for processing a substrate comprising the steps of: 
 (a) developing a photo sensitive material on the substrate with a developing solution;    (b) cleaning the developing solution with a cleaning solution; and    (c) radiating a beam with a wavelength shorter than that of a visible ray on the photo sensitive material before the photo sensitive material and the cleaning solution are dried out.    
     
     
         11 . The method as set forth in  claim 10 , 
 wherein the step (a) and the step (b) are performed in a first chamber, and the step (c) is performed in a second chamber, different from the first chamber.    
     
     
         12 . The method as set forth in  claim 11 , 
 wherein the step (c) has a step of reducing a pressure in the second chamber.    
     
     
         13 . The method as set forth in  claim 11 , 
 wherein the step (c) has a step of replacing an air inside the second chamber with an inert gas.    
     
     
         14 . The method as set forth in  claim 13 , 
 wherein the inert gas includes a helium gas.    
     
     
         15 . The method as set forth in  claim 10 , 
 wherein the beam is an electron beam.    
     
     
         16 . The method as set forth in  claim 10 , 
 wherein the beam is an ultraviolet ray.    
     
     
         17 . The method as set forth in  claim 10 , further comprising the step of: 
 supplying a surface-active agent on the substrate after the cleaning solution is supplied.    
     
     
         18 . The method as set forth in  claim 10 , 
 wherein the step (c) is a radiating step radiating a beam with a wavelength shorter than that of a visible ray on the photo sensitive material before the photo sensitive material and the cleaning solution are dried out.    
     
     
         19 . The method as set forth in  claim 10 , 
 wherein, the step (c) is performed in a reduced atmospheric pressure and/or in a low oxygen concentration compared with a helium gas or a nitrogen gas and /or oxygen concentration.    
     
     
         20 . A method for processing a substrate comprising the steps of: 
 applying a photo sensitive material on the substrate;    radiating a beam with a wavelength shorter than that of a visible ray on the photosensitive material;    developing a photo sensitive material with a developing solution; and    cleaning the developing solution with a cleaning solution.    
     
     
         21 . The method as set forth in  claim 20 , 
 wherein the radiating step sets a depth of the radiation on the photo sensitive material.    
     
     
         22 . A method for processing a substrate comprising the steps of: 
 heating the substrate at a first temperature;    radiating a beam with a wavelength shorter than that of a wavelength of a visible ray on the photo sensitive material after the heating;    and heating the radiated substrate at a second temperature higher than the first temperature.    
     
     
         23 . A method for processing a substrate comprising the steps of: 
 (a) forming at least a predetermined pattern on the substrate;    (b) performing a treatment using an aqueous solution on the substrate after the step (a); and    (c) splashing the aqueous solution between the patterns after the step (b) with a predetermined electromagnetic energy.    
     
     
         24 - 27 . cancelled.