Ceramic substrate for a semiconductor producing/examining device

Abstract

It is an object of the present invention to provide a ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, and is preferable as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof of the present invention is the ceramic substrate, wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.

1 . A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof, 
 wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.    
     
     
         2 . The ceramic substrate for a semiconductor producing/examining device according to  claim 1 , 
 wherein an average diameter of ceramic grains of said fractured section is 0.5 to 10 μm.    
     
     
         3 . The ceramic substrate for a semiconductor producing/examining device according to  claim 1 , 
 wherein an impurity element is locally distributed in boundaries of ceramic grains of said fractured section.    
     
     
         4 . The ceramic substrate for a semiconductor producing/examining device according to  claim 1 , 
 wherein thermal conductivity of said ceramic substrate is 100 W/m·K or more.    
     
     
         5 . The ceramic substrate for a semiconductor producing/examining device according to  claim 1 , 
 wherein said ceramic substrate is constituted such that:    an impurity-existent area where an impurity element is locally distributed in triple points of crystal grains, and    an impurity element-nonexistent area where an impurity is not locally distributed in the triple points of the crystal grains,    coexist therein.