Organic thin-film semiconductor element and manufacturing method for the same

Abstract

There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.

What is claimed is:  
     
         1 . An organic semiconductor device, comprising: 
 a drain electrode;    a source electrode;    a gate electrode;    a channel that is made of an organic semiconductor material and is disposed between said drain electrode and said source electrode; and    an insulation film that is disposed between said gate electrode and said channel;    wherein said insulation film is formed under an atmospheric pressure environment by employing a plasma processing.    
     
     
         2 . The organic semiconductor device of  claim 1 , 
 wherein said insulation film comprises either oxide compounds or nitride compounds.    
     
     
         3 . The organic semiconductor device of  claim 2 , 
 wherein said insulation film comprises anyone of silicon oxide, aluminum oxide, tantalum oxide and titanium oxide.    
     
     
         4 . The organic semiconductor device of  claim 2 , 
 wherein said insulation film comprises silicon nitride.    
     
     
         5 . The organic semiconductor device of  claim 1 , 
 wherein said organic semiconductor material is π-conjugated polymers.    
     
     
         6 . The organic semiconductor device of  claim 1 , 
 wherein said organic semiconductor device is fabricated on a supporting substrate; and    wherein said supporting substrate is a sheet made of a resin material.    
     
     
         7 . The organic semiconductor device of  claim 6 , 
 wherein said sheet is a plastic film.    
     
     
         8 . The organic semiconductor device of  claim 1 , 
 wherein said organic semiconductor device is fabricated on a supporting substrate; and    wherein said supporting substrate is made of polymers.    
     
     
         9 . The organic semiconductor device of  claim 1 , 
 wherein said organic semiconductor device is fabricated on a supporting substrate; and    wherein sections of said organic semiconductor device are formed in an order of said channel, said insulation film and said gate electrode.    
     
     
         10 . The organic semiconductor device of  claim 1 , 
 wherein said organic semiconductor device is a transistor.    
     
     
         11 . A display panel for displaying an image, comprising: 
 a supporting substrate; and    a plurality of organic semiconductor devices formed on said supporting substrate;    wherein each of said plurality of organic semiconductor devices comprises: 
 a drain electrode;  
 a source electrode;  
 a gate electrode;  
 a channel that is made of an organic semiconductor material and is disposed between said drain electrode and said source electrode; and  
 an insulation film that is disposed between said gate electrode and said channel;  
 wherein said insulation film is formed under an atmospheric pressure environment by employing a plasma processing.