Methods for forming protective layers on semiconductor device components so as to reduce or eliminate the occurrence of delamination thereof and cracking therein

Abstract

A method for forming protective layers on a plurality of semiconductor device components carried by a fabrication substrate includes applying a layer of protective material to surfaces of the semiconductor device components. The layer of protective material is then severed and the fabrication substrate is at least partially severed. Cracks and delaminated regions that are formed during severing are then healed. The protective material may be applied as a preformed sheet or in a liquid form, then at least partially cured or hardened. If a curable polymer is employed as the protective material, it may be partially cured before severing is effected, then self-healed before being fully cured. Alternatively, a thermoplastic material may be used as the protective material, with healing being effected by heating at least regions of the thermoplastic material. Semiconductor device components, including chip-scale packages, which are formed by the method are also disclosed.

1 . A method for forming a protective layer on a plurality of semiconductor device components, comprising: 
 providing a fabrication substrate carrying a plurality of semiconductor device components, adjacent semiconductor device components on the fabrication substrate being separated from one another by a street extending therebetween;    applying a protective material to active surfaces of at least the adjacent semiconductor device components;    severing the protective material and at least partially severing the adjacent semiconductor device components from one another along the street; and    healing cracks and delaminated areas in the protective material formed during the at least partially severing.    
     
     
         2 . The method of  claim 1 , wherein providing comprises providing a fabrication substrate with at least one bond pad exposed at an active surface of each of the adjacent semiconductor device components.  
     
     
         3 . The method of  claim 2 , wherein providing comprises providing a fabrication substrate with a plurality of semiconductor device components comprising at least one of semiconductor devices, interposers, and carrier substrates.  
     
     
         4 . The method of  claim 2 , wherein applying comprises applying the protective material such that the at least one bond pad of each of the plurality of semiconductor device components is exposed through the protective material sufficiently to effect electrical contact therewith.  
     
     
         5 . The method of  claim 2 , wherein providing comprises providing the fabrication substrate with each of the plurality of semiconductor device components having a conductive structure protruding from the at least one bond pad thereof.  
     
     
         6 . The method of  claim 5 , wherein applying comprises applying the protective material such that the protective material contacts a base portion of at least one conductive structure.  
     
     
         7 . The method of  claim 6 , wherein applying comprises forming a support structure around the base portion of the at least one conductive structure.  
     
     
         8 . The method of  claim 5 , wherein applying comprises applying the protective material such that the protective material is spaced apart from a base portion of at least one conductive structure.  
     
     
         9 . The method of  claim 1 , wherein applying comprises applying a preformed sheet of protective material to the active surfaces.  
     
     
         10 . The method of  claim 9 , wherein applying the preformed sheet comprises applying a preformed sheet comprising partially cured protective material.  
     
     
         11 . The method of  claim 9 , wherein applying the preformed sheet comprises applying a preformed sheet comprising thermoplastic material.  
     
     
         12 . The method of  claim 9 , wherein applying preformed sheet comprises applying a preformed sheet including apertures positioned to align with the at least one bond pad of each of the adjacent semiconductor device components.  
     
     
         13 . The method of  claim 2 , wherein applying comprises applying a preformed sheet of protective material to the active surfaces.  
     
     
         14 . The method of  claim 13 , wherein applying the preformed sheet comprises applying a preformed sheet comprising partially cured protective material.  
     
     
         15 . The method of  claim 13 , wherein applying the preformed sheet comprises applying a preformed sheet comprising thermoplastic material.  
     
     
         16 . The method of  claim 13 , wherein applying the preformed sheet comprises applying a preformed sheet including apertures therein positioned to align with the at least one bond pad of each of the adjacent semiconductor device components.  
     
     
         17 . The method of  claim 13 , wherein applying the preformed sheet comprises applying the preformed sheet such that a conductive structure protruding from each of the adjacent semiconductor device components on the fabrication substrate passes through a plane of the preformed sheet.  
     
     
         18 . The method of  claim 17 , further comprising heating each conductive structure prior to applying the preformed sheet.  
     
     
         19 . The method of  claim 1 , wherein applying comprises applying the protective material in a liquid state.  
     
     
         20 . The method of  claim 19 , further comprising spreading the protective material to form a protective layer on the active surfaces.  
     
     
         21 . The method of  claim 20 , wherein applying the protective material in the liquid state comprises applying a quantity of a substantially uncured polymer to the active surfaces.  
     
     
         22 . The method of  claim 21 , further comprising partially curing the polymer prior to severing and at least partially severing.  
     
     
         23 . The method of  claim 22 , wherein healing is effected whiled the polymer remains in a partially cured state.  
     
     
         24 . The method of  claim 23 , further comprising further curing the polymer following healing.  
     
     
         25 . The method of  claim 24 , further comprising completely severing the adjacent semiconductor device components from one another along the street following healing.  
     
     
         26 . The method of  claim 20 , wherein applying the protective material in the liquid state comprises applying liquefied thermoplastic material to the active surfaces.  
     
     
         27 . The method of  claim 26 , further comprising permitting or causing the thermoplastic material to at least partially harden prior to severing and at least partially severing.  
     
     
         28 . The method of  claim 26 , wherein healing comprises heating at least portions of the thermoplastic material located over peripheral regions of the adjacent semiconductor device components following severing and at least partially severing.  
     
     
         29 . The method of  claim 27 , further comprising completely severing the adjacent semiconductor device components from one another along the street following healing.