Plating method and plating apparatus

Abstract

The present invention relates to a plating method and a plating apparatus which can attain embedding of copper into fine interconnection patterns with use of a plating liquid having high throwing power and leveling properties, and which can make film thickness of a plated film substantially equal between an interconnection region and a non-interconnection region. A plating method comprises filling a plating liquid containing metal ions and an additive into a plating space formed between a substrate and an anode disposed closely to the substrate so as to face the substrate, and changing concentration of the additive in the plating liquid filled into the plating space during a plating process.

What is claimed is:  
     
         1 . A plating method, comprising: 
 disposing a substrate and an anode in such a state that the substrate faces said anode;    flowing a current between the substrate and said anode while supplying a plating liquid therebetween; and    moving a portion of the substrate facing said anode in such a state that an inner central portion of the surface of the substrate faces said anode for a longer time than an outer peripheral portion of the surface of the substrate faces said anode.    
     
     
         2 . The plating method according to  claim 1 , wherein the portion of the substrate facing said anode is moved by rotation of the substrate.  
     
     
         3 . The plating method according to  claim 1 , wherein the portion of the substrate facing said anode is moved by rotation of said anode.  
     
     
         4 . The plating method according to  claim 1 , wherein the portion of the substrate facing said anode is moved by translation of said anode.