Process for producing semiconductor device

Abstract

By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semiconductor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.

What is claimed is:  
     
         1 . A plasma etching treatment apparatus comprising: 
 an etching treatment room;    a substrate stage for placing a semiconductor substrate thereon installed in the etching treatment room;    a plasma generating means for generating plasma in the etching treatment room;    a gas introducing means for introducing (a) a treating gas for etching and (b) a treating gas for decomposing and removing etching products, into the etching treatment room; and    a monitoring means for monitoring a retained amount of etching products.    
     
     
         2 . A plasma etching treatment apparatus comprising: 
 an etching treatment room;    a substrate stage, for placing a semiconductor substrate thereon, installed in the etching treatment room;    a plasma generating means for generating plasma in the etching treatment room; and    a gas introducing means for introducing a treating gas into the etching treatment room.