Electrostatic chuck having dielectric member with stacked layers and manufacture

Abstract

An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.

What is claimed is:  
     
         1 . An electrostatic chuck comprising: 
 (a) a dielectric member comprising: 
 (i) a first layer comprising a semiconductive material; and  
 (ii) a second layer over the first layer, the second layer comprising an insulative material; and  
   (b) an electrode in the dielectric member.    
     
     
         2 . An electrostatic chuck according to  claim 1  wherein the first layer comprises a resistivity of from about 5×10 9  Ωcm to about 8×10 10  Ωcm.  
     
     
         3 . An electrostatic chuck according to  claim 1  wherein the second layer comprises a resistivity of at least about 1×10 11  Ωcm.  
     
     
         4 . An electrostatic chuck according to  claim 1  wherein the second layer comprises a resistivity of from about 1×10 11  to about 1×10 20  Ωcm.  
     
     
         5 . An electrostatic chuck according to  claim 1  wherein the first layer comprises Al 2 O 3 .  
     
     
         6 . An electrostatic chuck according to  claim 1  wherein the first layer comprises TiO 2 .  
     
     
         7 . An electrostatic chuck according to  claim 1  wherein the first layer comprises AlN.  
     
     
         8 . An electrostatic chuck according to  claim 1  wherein the electrode is embedded in the first layer of the dielectric member.  
     
     
         9 . An electrostatic chuck according to  claim 1  wherein the second layer comprises AlN.  
     
     
         10 . An electrostatic chuck according to  claim 1  wherein the second layer comprises SiO 2  or ZrO 2 .  
     
     
         11 . An electrostatic chuck according to  claim 1  wherein the second layer comprises polyimide or Teflon®.  
     
     
         12 . An electrostatic chuck according to  claim 1  wherein the dielectric member is fabricated by sintering ceramic powders.  
     
     
         13 . An electrostatic chuck comprising: 
 (a) a dielectric member comprising: 
 (i) a first layer comprising a resistivity of from about 5×10 9  Ωcm to about 8×10 10  Ωcm; and  
 (ii) a second layer over the first layer, the second layer comprising a resistivity of from about 1×10 11  to about 1×10 20  Ωcm; and  
   (b) an electrode in the dielectric member.    
     
     
         14 . An electrostatic chuck according to  claim 13  wherein the first layer comprises Al 2 O 3 .  
     
     
         15 . An electrostatic chuck according to  claim 13  wherein the first layer comprises TiO 2 .  
     
     
         16 . An electrostatic chuck according to  claim 13  wherein the electrode is embedded in the first layer of the dielectric member.  
     
     
         17 . An electrostatic chuck according to  claim 13  wherein the second layer comprises SiO 2 .  
     
     
         18 . An electrostatic chuck according to  claim 13  wherein the second layer comprises ZrO 2 .  
     
     
         19 . An electrostatic chuck comprising: 
 (a) a dielectric member comprising: 
 (i) a first semiconductive layer having a resistivity that is sufficiently low to provide (i) a charging time of less than about 3 seconds, and (ii) allow accumulated electrostatic charge to substantially dissipate in less than about 1 second; and  
 (ii) a second insulative layer over the first semiconductive layer, the second insulative layer having a resistivity higher than the first semiconductive layer; and  
   (b) an electrode in the dielectric member.    
     
     
         20 . An electrostatic chuck according to  claim 19  wherein the first semiconductive layer comprises a resistivity of from about 5×10 9  Ωcm to about 8×10 10  Ωcm.  
     
     
         21 . An electrostatic chuck according to  claim 19  wherein the second insulative layer comprises a resistivity of from about 1×10 11  to about 1×10 20  Ωcm.  
     
     
         22 . An electrostatic chuck according to  claim 19  wherein the first semiconductive layer comprises Al 2 O 3 .  
     
     
         23 . An electrostatic chuck according to  claim 19  wherein the electrode is embedded in the first semiconductive layer of the dielectric member.  
     
     
         24 . An electrostatic chuck according to  claim 19  wherein the second insulative layer comprises SiO 2 .  
     
     
         25 . An electrostatic chuck according to  claim 19  wherein the second insulative layer comprises ZrO 2 .