Semiconductor device having capacitors and method of manufacturing the same

Abstract

A semiconductor device includes a first electrode film, first and second electrode films, first and second connection parts, first and second wirings, and a protective insulating film. The second electrode film opposes the first electrode film. The capacitor insulating film is provided between the first electrode film and the second electrode film. The first and second connection parts are electrically connected to the first and second electrode films, respectively. The first wiring is electrically connected to the first electrode film by the first connection part. The second wiring is electrically connected to the second electrode film by the second connection part. The protective insulating film is provided between the capacitor insulating film and the second electrode film or on the second electrode film.

1 - 10  (Canceled).  
     
     
         11 : A method of manufacturing a semiconductor device comprising a capacitor which has a first electrode film, a second electrode film being provided above the first electrode film, and a capacitor insulating film provided between the first and second electrode films, said method comprising: 
 forming a protective insulating film between the capacitor insulating film and the second electrode film or on the second electrode film;    forming an insulating film on the capacitor;    forming a first trench configured to expose a part of the first electrode film, and a second trench configured to expose a part of the second electrode film;    performing heat treatment which uses a hydrogen-containing gas; and    forming in the first trench a first connection part electrically connected to the first electrode, and forming in the second trench a second connection part electrically connected to the second electrode film.    
     
     
         12 : A method according to  claim 11 , further comprising: 
 forming a first wiring trench and a second wiring trench before the heat treatment is performed, said first and second wiring trenches continuing with the first and second trenches, respectively; and    forming a first wiring and a second wiring in the first and second wiring trenches, respectively, at the same time the first and second connection parts are formed.    
     
     
         13 : A method according to  claim 11 , wherein, the protective insulating film has relative dielectric constant ε of at least 10.  
     
     
         14 : A method according to  claim 11 , wherein 10 ≦ε≦30, where ε is relative dielectric constant of the protective insulating film.  
     
     
         15 : A method according to  claim 11 , wherein 10 nm≦X≦20 nm, where X is a thickness of the protective insulating film.  
     
     
         16 : A method according to  claim 11 , wherein the protective insulating film has a thickness X that ranges from 10% to 40% of the thickness of the capacitor insulating film.  
     
     
         17 : A method according to  claim 11 , wherein the capacitor insulating film is a tantalum oxide film.  
     
     
         18 : A method according to  claim 11 , wherein the protective insulating film is an aluminum oxide film.  
     
     
         19 : A method according to  claim 11 , wherein the capacitor is formed on a diffusion-preventing film.  
     
     
         20 : A semiconductor device according to  claim 12 , wherein the first wiring and the second wiring are formed of copper.  
     
     
         21 : A method according to  claim 11 , wherein the first connection part and the second connection part are formed of copper or tungsten.  
     
     
         22 : A method according to  claim 11 , wherein the first electrode film and the second electrode film are formed of a titanium nitride film.  
     
     
         23 : A method according to  claim 11 , wherein the capacitor insulating film has a first side where the first electrode film is present and a second side where the second electrode film is present, and the protective insulating film is formed only on the second side.  
     
     
         24 : A method according to  claim 11 , wherein the protective insulating film is formed only on the second electrode film located opposite the capacitor insulating film.  
     
     
         25 : A method according to  claim 11 , wherein the capacitor insulating film is in direct contact with the first electrode film.  
     
     
         26 : A method according to  claim 11 , wherein the protective insulating film prevents reduction of the capacitor insulating film.