US2004188273A1PendingUtilityA1
Electrolytic polishing apparatus, electrolytic polishing method, and wafer subject to polishing
Priority: Aug 4, 2000Filed: Apr 13, 2004Published: Sep 30, 2004
Est. expiryAug 4, 2020(expired)· nominal 20-yr term from priority
H10P 72/0604B24B 37/013B24B 49/04C25F 3/16Y10S451/908
42
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Claims
Abstract
An electrolytic polishing apparatus for electrolytic-polishing a conductive film subject to formed on a substrate including a resistance measuring unit for measuring the resistance of the film. The electrolytic polishing apparatus may also include a termination point detecting portion for detecting a termination point of polishing by reading a variation of the resistance value measured by the resistance measuring unit, or a polishing control portion for terminating electrolytic polishing on the basis of the termination point of polishing detected by the termination point detecting portion.
Claims
exact text as granted — not AI-modified1 . (Canceled)
2 . An electrolytic polishing apparatus for electrolytic-polishing a conductive film formed on a substrate, comprising:
a resistance measuring unit for measuring electric resistance of said conductive film and a etching stopper film formed on said substrate, and further comprising a termination point detecting unit for detecting a termination point of polishing by reading a variation resistance value of said conductive film and said etching stopper film measured by said resistance measuring unit.
3 . (Canceled)
4 . (Canceled)
5 . (Canceled)
6 . (Canceled)
7 . (Canceled)
8 . (Canceled)
9 . (Canceled)
10 . (Canceled)Join the waitlist — get patent alerts
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