Processing apparatus for processing sample in predetermined atmosphere

Abstract

A load-lock chamber has a substrate transfer path between a first gas atmosphere and a second gas atmosphere. The load-lock chamber includes a first gate valve through which a substrate is transferred between the first gas atmosphere and the load-lock chamber, a second gate valve through which a substrate is transferred between the second gas atmosphere and the load-lock chamber and a gas supply mechanism which supplies the first gas and the second gas to the load-lock chamber. The gas supply mechanism is arranged to supply the second gas to the load-lock chamber when the first gate valve is closed and the second gate valve is opened during the substrate being transferred between the second atmosphere and the load-lock chamber.

1 - 13 . Cancel.  
     
     
         14 . A load-lock chamber having a substrate transfer path between a first gas atmosphere and a second gas atmosphere, the load-lock chamber comprising: 
 a first gate valve through which a substrate is transferred between the first gas atmosphere and the load-lock chamber;    a second gate valve through which a substrate is transferred between the second gas atmosphere and the load-lock chamber; and    a gas supply mechanism which supplies the first gas and the second gas to the load-lock chamber,    wherein the gas supply mechanism is arranged to supply the second gas to the load-lock chamber when the first gate valve is closed and the second gate valve is opened during the substrate being transferred between the second atmosphere and the load-lock chamber.    
     
     
         15 . A load-lock chamber having a substrate transfer path between a first gas atmosphere and a second gas atmosphere, the load-lock chamber comprising: 
 a gas supply pipe which supplies the first gas and the second gas to the load-lock chamber; and    a straightening plate provided at an entire upper portion of an interior space within the load-lock chamber to cause the flow of the first gas and the second gas supplied through the gas supply pipe to be uniform.    
     
     
         16 . The load-lock chamber according to  claim 15 , wherein the straightening plate comprises a metal plate with a plurality of perforations formed therein.  
     
     
         17 . A substrate processing system, comprising: 
 a load-lock chamber having a substrate transfer path between a first gas atmosphere and a second gas atmosphere, the load-lock chamber including a first gate valve through which a substrate is transferred between the first gas atmosphere and the load-lock chamber, a second gate valve through which a substrate is transferred between the second gas atmosphere and the load-lock chamber, and a gas supply mechanism which supplies the first gas and the second gas to the load-lock chamber, the gas supply mechanism being arranged to supply the second gas to the load-lock chamber when the first gate valve is closed, and the second gate valve is opened during the substrate being transferred between the second atmosphere and the load-lock chamber; and    a processing device adapted to process the substrate in the first gas atmosphere.    
     
     
         18 . An exposure processing system comprising: 
 a load-lock chamber having a substrate transfer path between a first gas atmosphere and a second gas atmosphere, the load-lock chamber including a first gate valve through which a substrate is transferred between the first gas atmosphere and the load-lock chamber, a second gate valve through which a substrate is transferred between the second gas atmosphere and the load-lock chamber, and a gas supply mechanism which supplies the first gas and the second gas to the load-lock chamber, the gas supply mechanism being arranged to supply the second gas to the load-lock chamber when the first gate valve is closed and the second gate valve is opened during the substrate being transferred between the second atmosphere and the load-lock chamber; and    an exposure device adapted to expose the substrate in the first gas atmosphere.    
     
     
         19 . A device manufacturing method, comprising: 
 exposing a substrate using an exposure processing system defined in  claim 18;  and    developing the exposed substrate using a developer.    
     
     
         20 . A substrate processing system comprising: 
 a load-lock chamber having a substrate transfer path between a first gas atmosphere and a second gas atmosphere, the load-lock chamber including a gas supply pipe which supplies the first gas and the second gas to the load-lock chamber, and a straightening plate provided at an entire upper portion of an interior space within the load-lock chamber to cause the flow of the first gas and the second gas supplied through the gas supply pipe to be uniform; and    a processing device adapted to process the substrate in the first gas atmosphere.    
     
     
         21 . An exposure processing system comprising: 
 a load-lock chamber having a substrate transfer path between a first gas atmosphere and a second gas atmosphere, the load-lock chamber including a gas supply pipe which supplies the first gas and the second gas to the load-lock chamber, and a straightening plate provided at an entire upper portion of an interior space within the load-lock chamber to cause the flow of the first gas and the second gas supplied through the gas supply pipe to be uniform; and    an exposure device adapted to expose the substrate in the first gas atmosphere.    
     
     
         22 . A device manufacturing method comprising: 
 exposing a substrate using an exposure processing system defined in  claim 21;  and    developing the exposed substrate using a developer.