Cleaning method of apparatus for manufacturing semiconductor device

Abstract

A cleaning method of an apparatus for manufacturing a semiconductor device includes providing a first cleaning gas and a second cleaning gas into a chamber, and forming a mixture of the first cleaning gas and the second cleaning gas, wherein the first cleaning gas includes a fluorocarbon gas and an oxygen gas and the second cleaning gas includes nitrogen, activating the mixture of the first cleaning gas and the second cleaning gas by a high frequency power, and exhausting residues cleaned by the activated mixture and remaining gases.

What is claimed is:  
     
         1 . A cleaning method of an apparatus for manufacturing a semiconductor device, comprising: 
 providing a first cleaning gas and a second cleaning gas into a chamber, and forming a mixture of the first cleaning gas and the second cleaning gas, the first cleaning gas including a fluorocarbon gas and an oxygen gas, the second cleaning gas including nitrogen;    activating the mixture of the first cleaning gas and the second cleaning gas by a high frequency power; and    exhausting residues cleaned by the activated mixture and remaining gases.    
     
     
         2 . The method according to  claim 1 , wherein the fluorocarbon gas is one of C 3 F 8 , C 4 F 8  and C 4 F 80 .  
     
     
         3 . The method according to  claim 1 , wherein the second cleaning gas includes one of N 2 , N 2 O and NO.  
     
     
         4 . The method according to  claim 1 , wherein a flow rate of the fluorocarbon gas to the oxygen gas is within a range of 0.1 to 0.5.  
     
     
         5 . The method according to  claim 1 , wherein a flow rate of the second cleaning gas to the first cleaning gas is within a range of 0.01 to 0.5.  
     
     
         6 . The method according to  claim 1 , wherein the mixture of the first cleaning gas and the second cleaning gas is activated in a plasma generator outside the chamber.  
     
     
         7 . The method according to  claim 1 , wherein the mixture of the first cleaning gas and the second cleaning gas cleans silicon, silicon nitride and silicon oxide in the chamber.  
     
     
         8 . A cleaning method of an apparatus for manufacturing a semiconductor device, comprising: 
 activating a first cleaning gas by a high frequency power, the first cleaning gas including a fluorocarbon gas and an oxygen gas;    activating a second cleaning gas by a high frequency power, the second cleaning gas including nitrogen;    mixing the activated first cleaning gas and the activated second cleaning gas, thereby forming a mixture of the first cleaning gas and the second cleaning gas; and    exhausting residues cleaned by the mixtuer and remaining gases.    
     
     
         9 . The method according to  claim 8 , wherein the fluorocarbon gas is one of C 3 F 8 , C 4 F 8  and C 4 F 80 .  
     
     
         10 . The method according to  claim 8 , wherein the second cleaning gas includes one of N 2 , N 2 O and NO.  
     
     
         11 . The method according to  claim 8 , wherein a flow rate of the fluorocarbon gas to the oxygen gas is within a range of 0.1 to 0.5.  
     
     
         12 . The method according to  claim 8 , wherein a flow rate of the second cleaning gas to the first cleaning gas is within a range of 0.01 to 0.5.  
     
     
         13 . The method according to  claim 8 , wherein the mixture of the first cleaning gas and the second cleaning gas cleans silicon, silicon nitride and silicon oxide in the chamber.