Plasma processing apparatus

Abstract

A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

What is claimed is:  
     
         1 . A plasma processing apparatus comprising: 
 a vacuum processing chamber;    a pair of electrodes opposite to each other in said vacuum processing chamber, one of the electrodes being used also as a sample table capable of holding a sample which includes an insulator film;    a plasma generating means including said pair of electrodes;    an electrostatic adsorption film arranged at the electrode used as said sample table to cause a thermal conductive gas to be supplied between said film and a rear surface of said sample; and    a pressure reducing means for reducing a pressure within said vacuum processing chamber,    wherein the apparatus includes:    a means for setting a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa;    a high frequency power supply for applying a high frequency electric power of 30 MHz to 200 MHz between said pair of electrodes;    an electrode cover disposed at the other electrode of said pair of electrodes with a clearance between said pair of electrodes being 30 mm to 100 mm;    a gas introducing means having fine plural apertures provided at said electrode cover so as to introduce a fluorine-containing etching gas to said vacuum processing chamber; and    a power supply for accelerating ions in a plasma connected to said one electrode.    
     
     
         2 . A plasma processing apparatus comprising: 
 a vacuum processing chamber;    a pair of electrodes opposite to each other in said vacuum processing chamber, one of the electrodes being used also as a sample table capable of holding a sample which includes an insulator film and having a diameter of 300 mm or more;    a plasma generating means including said pair of electrodes;    an electrostatic adsorption film arranged at the electrode used as said sample table to cause a thermal conductive gas to be supplied between said film and a rear surface of said sample; and    a pressure reducing means for reducing a pressure within said vacuum processing chamber,    wherein the apparatus includes:    a means for setting a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa;    an electrode cover disposed at the other electrode of said pair of electrodes with a clearance between said pair of electrodes being 30 mm to 60 mm;    a gas introducing means having fine plural apertures provided at said electrode cover so as to introduce a fluorine-containing etching gas to said vacuum processing chamber;    a high frequency power supply for applying a high frequency electric power of 30 MHz to 200 MHz to said pair of electrodes to form said introduced gas into a plasma; and    a power supply for accelerating ions in a plasma connected to said one electrode.    
     
     
         3 . A plasma processing apparatus comprising: 
 a vacuum processing chamber;    a pair of electrodes opposite to each other in said vacuum processing chamber, one of the electrodes being used also as a sample table capable of holding a sample which includes an insulator film and which has a diameter of 300 mm or more;    a plasma generating means including said pair of electrodes;    an electrostatic adsorption film arranged at the electrode used as said sample table to cause a thermal conductive gas to be supplied between the film and a rear surface of said sample; and    a pressure reducing means for reducing a pressure within said vacuum processing chamber,    wherein the apparatus includes:    a means for setting a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa;    an electrode cover disposed at the other electrode of said pair of electrodes with a clearance between said pair of electrodes being 30 mm to 60 mm;    a gas introducing means having fine plural apertures provided at said electrode cover so as to introduce a fluorine-containing etching gas to said vacuum processing chamber;    a high frequency power supply for applying a high frequency electric power of 30 MHz to 200 MHz to said pair of electrodes to form said introduced gas into a plasma;    a power supply for accelerating ions in a plasma connected to said one electrode; and    a suscepter cover comprising a material containing Si or C located near said sample.