Method for activating P-type semiconductor layer

Abstract

A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.

What is claimed is:  
     
         1 . A method for activating a P-type semiconductor layer, wherein said P-type semiconductor layer is a semiconductor layer of a semiconductor device, comprising: 
 providing a substrate;    growing said semiconductor layer on said substrate; and    employing a plasma to react with said semiconductor layer.    
     
     
         2 . The method according to  claim 1 , wherein said plasma comprises a gas source comprising at least a VI Group compound element.  
     
     
         3 . The method according to  claim 1 , wherein said semiconductor layer comprises a III-V Group compound element.  
     
     
         4 . The method according to  claim 1 , wherein said semiconductor layer comprises a P-type impurity.  
     
     
         5 . The method according to  claim 4 , wherein said P-type impurity comprises a di-valence element.  
     
     
         6 . The method according to  claim 4 , wherein said P-type impurity is selected from the group of Zn, Cd, Be, Mg, Ca, Ba, or an impurity of a mixture meterial thereof.  
     
     
         7 . A method for activating a P-type semiconductor layer of a semiconductor device, comprising: 
 providing a substrate;    growing a semiconductor layer on said substrate, wherein said semiconductor layer comprises a P-type impurity; and    employing a plasma to react with said semiconductor layer.    
     
     
         8 . The method according to  claim 7 , wherein said plasma comprises a gas source comprising at least a VI Group compound element.  
     
     
         9 . The method according to  claim 7 , wherein said plasma comprises a gas source comprising O 2 .  
     
     
         10 . The method according to  claim 7 , wherein said plasma comprises a gas source comprising NO.  
     
     
         11 . The structure according to  claim 7 , wherein said plasma comprises a gas source comprising N 2 O.  
     
     
         12 . The method according to  claim 7 , wherein said semiconductor layer comprises a III-V Group compound element.  
     
     
         13 . The method according to  claim 7 , wherein said P-type impurity comprises a di-valence element.  
     
     
         14 . The method according to  claim 7 , wherein said P-type impurity is selected from the group of Zn, Cd, Be, Mg, Ca, Ba, or an impurity of a mixture meterial thereof.  
     
     
         15 . A method for activating a P-type semiconductor layer of a semiconductor device, comprising: 
 providing a substrate;    growing a semiconductor layer on said substrate, wherein said semiconductor layer comprises a P-type impurity; and    employing a plasma to react with said semiconductor layer, wherein said plasma comprises a gas source comprising at least a gas with oxygen atom.    
     
     
         16 . The method according to  claim 15 , wherein said gas source comprises O 2 .  
     
     
         17 . The method according to  claim 15 , wherein said gas source comprises NO.  
     
     
         18 . The method according to  claim 15 , wherein said gas source comprises N 2 O.  
     
     
         19 . The method according to  claim 15 , wherein said semiconductor layer comprises GaN.  
     
     
         20 . The method according to  claim 15 , wherein said P-type impurity at least comprises a II Group element.  
     
     
         21 . The method according to  claim 15 , wherein said P-type impurity comprises Mg.  
     
     
         22 . The method according to  claim 15 , wherein said P-type impurity comprises Zn.