Plasma processing apparatus and method for manufacturing electrostatic chuck

Abstract

An electrostatic chuck comprising an insulating base 6 , a plurality of conductive aluminum thin films 4 a , 4 b deposited on the surface of the base, and alumite films 2 a , 2 b formed by anodizing the surfaces of the conductive thin films 4 a , 4 b , wherein the conductive thin films 4 a , 4 b are each provided with a DC voltage of a different polarity so that a surface chucking a wafer 7 is electrostatically bipolar.

What is claimed is:  
     
         1 . A plasma processing apparatus comprising a plasma generating means for generating plasma within a vacuum processing chamber, and an electrostatic chuck for supporting on its upper surface a wafer to be subjected to processing; wherein 
 a surface for chucking the wafer of the electrostatic chuck comprises an alumite film formed by anodizing aluminum, and said surface for chucking the wafer is electrostatically bipolar.    
     
     
         2 . A plasma processing apparatus according to  claim 1 , wherein the electrostatic chuck is formed by depositing a conductive layer on an insulating base, depositing an aluminum layer on the conductive layer, and anodizing the aluminum layer.  
     
     
         3 . A plasma processing apparatus according to  claim 1 , wherein the electrostatic chuck is formed by depositing a conductive layer on an insulating ceramic base, depositing an aluminum layer on the conductive layer, and anodizing the aluminum layer.  
     
     
         4 . A plasma processing apparatus according to  claim 1 , further comprising an insulating thin film deposited on the surface of the alumite film.  
     
     
         5 . A plasma processing apparatus according to  claim 1 , further comprising an insulating ceramic thin film deposited on the surface of the alumite film.  
     
     
         6 . A method for manufacturing an electrostatic chuck for supporting on its upper surface a wafer to be subjected to processing, the electrostatic chuck having a surface for chucking wafer that is electrostatically bipolar, the method comprising: 
 forming plural conductive thin films on a surface of an insulating base;    forming an aluminum layer on a surface of said plural conductive thin films; and    forming an alumite film by anodizing a surface of said aluminum layer.    
     
     
         7 . A method for manufacturing an electrostatic chuck according to  claim 6 , further comprising forming an insulating ceramic film on a surface of said alumite film.