US2004173317A1PendingUtilityA1

Resist stripper system

Priority: Mar 7, 2003Filed: Mar 7, 2003Published: Sep 9, 2004
Est. expiryMar 7, 2023(expired)· nominal 20-yr term from priority
Inventors:Ke-Wei Tung
H10P 72/0421H10P 72/0402H01J 37/32834H01J 2237/3342G03F 7/427
30
PatentIndex Score
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Cited by
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Claims

Abstract

A system for removing photoresist and providing in-situ discharge. A resist stripper system includes a vertical downstream chamber, a gas passageway at the top of the vertical downstream chamber to supply an inert gas, and a wafer plate at the bottom inside the vertical downstream chamber to support and fix a wafer. A plasma generating system on the vertical downstream chamber near the gas passageway induces plasma of an inert gas. A first gas outlet on the vertical downstream chamber between the wafer plate and the plasma generating system exhausts the plasma, and a second gas outlet on the vertical downstream chamber beneath the wafer plate exhausts resist residue. A power supply is connected to the wafer plate to apply a positive bias to the wafer to attract electrons.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A resist stripper system, comprising: 
 a vertical downstream chamber;    a gas passageway at the top of the vertical downstream chamber to supply an inert gas;    a plasma generating system installed on the vertical downstream chamber near the gas passageway to induce plasma;    a wafer plate at the bottom inside the vertical downstream chamber to support and fix a wafer;    a first gas outlet on the vertical downstream chamber between the wafer plate and the plasma generating system, exhausting the plasma;    a second gas outlet on the vertical downstream chamber beneath the wafer plate, exhausting photoresist residue; and    a power supply to apply a positive bias to the wafer to attract electrons.    
     
     
         2 . The system as claimed in  claim 1 , wherein the gas passageway further supplies a resist stripping gas to the vertical downstream chamber.  
     
     
         3 . The system as claimed in  claim 1 , wherein the frequency of the plasma generating system is radio frequency (RF) or microwave.  
     
     
         4 . The system as claimed in  claim 1 , wherein the inert gas is Argon (Ar).  
     
     
         5 . The system as claimed in  claim 1 , wherein the inert gas is Xenon (Xe).  
     
     
         6 . The system as claimed in  claim 1 , further comprising a first pipeline connected to the first gas outlet.  
     
     
         7 . The system as claimed in  claim 6 , further comprising a first gas valve coupled to the first pipeline to control plasma exhaust from the first gas outlet.  
     
     
         8 . The system as claimed in  claim 7 , wherein only one of the first and second gas valves can open after which the other can open.  
     
     
         9 . The system as claimed in  claim 7 , further comprising a second pipeline connected to the second gas outlet.  
     
     
         10 . The system as claimed in  claim 9 , further comprising a second gas valve coupled to the second pipeline to control photoresist exhaust from the second gas outlet, wherein the second pipeline is connected to the first pipeline.  
     
     
         11 . The system as claimed in  claim 10 , further comprising a pump on the downstream of the connection point of the first and second pipelines.  
     
     
         11 . The system as claimed in  claim 10 , wherein only one of the first and second gas valves can open after which the other can open.  
     
     
         12 . The system as claimed in  claim 1 , wherein the power supply is electrically connected to the wafer plate.

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