US2004173311A1PendingUtilityA1

Plasma processing apparatus and method

Priority: Mar 4, 2003Filed: Mar 4, 2003Published: Sep 9, 2004
Est. expiryMar 4, 2023(expired)· nominal 20-yr term from priority
H10P 72/0602H10P 72/0421H10P 72/0604H01J 37/32935
40
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Claims

Abstract

Disclosed herein is a plasma processing apparatus and a plasma processing method capable of performing plasma processing by performing temperature control of a sample table in accordance with a process step to be performed on a sample. The plasma processing apparatus performs plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature control means, wherein the process recipe includes a plurality of temperature setting parameters for the sample table, and the plasma processing is performed on the sample in accordance with the process recipe which is prepared for each of a plurality of process steps.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A plasma processing apparatus for performing plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature control means, wherein 
 the process recipe includes a plurality of temperature setting parameters for the sample table, and    the plasma processing is performed on the sample in accordance with the process recipe which is prepared for each of a plurality of process steps.    
     
     
         2 . A plasma processing apparatus for performing plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature control means, wherein 
 the process recipe includes a plurality of temperature setting parameters for the sample table, and    the plasma processing is performed on the sample in accordance with the process recipe for which at least one of set temperatures of the temperature setting parameters is altered in response to a processing result of a preceding process performed on the sample, the processing result being obtained prior to the plasma processing.    
     
     
         3 . The plasma processing apparatus according to  claim 1  or  2 , wherein 
 the plasma processing apparatus has a sample temperature measurement means or a sample table temperature measurement means.  
 
     
     
         4 . The plasma processing apparatus according to any one of  claims 1  to  3 , wherein 
 the plurality of areas are an inner part and an outer part of the sample table.  
 
     
     
         5 . A plasma processing method for performing plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature control means, wherein 
 the process recipe includes a plurality of temperature setting parameters for the sample table, and    the plasma processing is performed on the sample in accordance with the process recipe which is prepared for each of a plurality of process steps.    
     
     
         6 . A plasma processing method for performing plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature control means, wherein 
 the process recipe includes a plurality of temperature setting parameters for the sample table, and    the plasma processing is performed on the sample in accordance with the process recipe for which at least one of set temperatures of the temperature setting parameters is altered in response to a processing result of a preceding process performed on the sample, the processing result being obtained prior to the plasma processing.    
     
     
         7 . The plasma processing method according to  claim 5  or  6 , wherein 
 the temperature control of the sample table is performed by using a sample temperature measurement means or a sample table temperature measurement means.  
 
     
     
         8 . The plasma processing method according to any one of  claims 5  to  7 , wherein 
 the plurality of areas are an inner part and an outer part of the sample table.

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