Methods of polishing, interconnect-fabrication, and producing semiconductor devices

Abstract

The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.

What is claimed is:  
     
         1 . A method for producing at least one semiconductor device, comprising the steps of 
 preparing a base material having an impurity doping layer;    forming an insulating film having an opening on the impurity doping layer;    forming a barrier metal film on the insulating film;    forming a Cu film on the barrier metal film;    polishing the Cu film using a first polishing solution comprising an oxidizer, a phosphoric acid, a lactic acid, and an inhibitor comprising anti-corrosive agent;    exposing the barrier metal film, upon said polishing, by mechanically scrubbing the Cu film;    polishing the barrier metal film using a second polishing solution comprising an abrasive powder; and    exposing the insulating film by mechanically scrubbing the barrier metal film.    
     
     
         2 . The method of  claim 1 , further comprising: 
 washing the base material after said exposing the insulating film by mechanically scrubbing the barrier metal film; and    drying the washed base material.    
     
     
         3 . A method for producing at least one semiconductor device, comprising the steps of 
 preparing a base material having thereon an interconnect layer;    forming an insulating film having an opening wherethrough the interconnect layer is exposed;    forming a barrier metal film on the base material whereon the insulating film is formed;    forming a Cu film on the barrier metal film;    polishing the Cu film using a first polishing solution comprising an oxidizer, a phosphoric acid, a lactic acid, an inhibitor comprising anti-corrosive agent, and water;    exposing the barrier metal film by mechanically scrubbing the Cu film;    polishing using a second polishing solution comprising an abrasive powder;    exposing the insulating film by mechanically scrubbing at least one of the Cu film and the barrier metal film;    washing the base material; and    drying the washed base material.    
     
     
         4 . A method for producing at least one semiconductor device, comprising the steps of 
 preparing a base material having thereon a metal interconnect layer;    forming an insulating film having an opening on the metal interconnect layer;    forming a barrier metal film on the base material whereon the insulating film is formed;    forming a Cu film on the barrier metal film;    polishing using a first polishing solution comprising hydrogen peroxide, phosphoric acid, lactic acid, and an inhibitor comprising anti-corrosive agent;    mechanically scrubbing the Cu film upon said polishing using a first polishing solution;    polishing using a second polishing solution after said mechanically scrubbing the Cu film;    mechanically scrubbing the Cu film and the barrier metal film after said polishing using the second polishing solution;    washing the base material; and    drying the washed base material.    
     
     
         5 . The method of  claim 4 , wherein the second polishing solution comprises an abrasive powder.