Substrate processing apparatus

Abstract

When plasma processing is finished, a gate valve 13 a is closed and cleaning gas is ejected from holes 121 a of a shower plate 121 , and at the same time, a microwave is generated from a microwave generator 101 . Further, at this time, the inside of a process chamber 110 is exhausted through a second exhaust port 106 . Since the exhaust is conducted through a second exhaust port 106 positioned lower than a wafer stage 104 in a lowered state when the inside of the process chamber 110 is cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber 110.

What is claimed is:  
     
         1 . A substrate processing apparatus comprising: 
 a process chamber in which a substrate is plasma-processed;    a gas introducing mechanism configured to introduce gas into said process chamber;    a first exhaust mechanism having a first exhaust port provided at a first position in said process chamber, and configured to exhaust the inside of said process chamber when gas for plasma processing is introduced into said process chamber by said gas introducing mechanism to plasma-process the substrate;    a second exhaust mechanism having a second exhaust port provided at a second position that is lower than the first position in said process chamber, and configured to exhaust the inside of said process chamber when gas for cleaning is introduced into said process chamber by said gas introducing mechanism to clean the inside of said process chamber.    
     
     
         2 . A substrate processing apparatus as set forth in  claim 1 , further comprising 
 a holding mechanism having a surface provided in said process chamber and configured to horizontally hold the substrate on the surface,    wherein the first exhaust port is positioned higher than said surface of the holding mechanism, and    wherein the second exhaust port is positioned lower than said holding mechanism.    
     
     
         3 . A substrate processing apparatus as set forth in  claim 2 , further comprising 
 a hoisting/lowering mechanism configured to move said holding mechanism upward when the substrate is plasma-processed, and move said support mechanism downward when the inside of said chamber is cleaned,    wherein the first exhaust port is positioned higher than said surface of the holding mechanism that has been moved up by said hoisting/lowering mechanism, and    wherein the second exhaust port is positioned lower than said holding mechanism that has been moved down by said hoisting/lowering mechanism.    
     
     
         4 . A substrate processing apparatus as set forth in  claim 1 , 
 wherein said first exhaust mechanism exhausts the inside of said process chamber concurrently with the exhaust by said second exhaust mechanism when the gas for cleaning is introduced into said process chamber by said gas introducing mechanism to clean the inside of the chamber.    
     
     
         5 . A substrate processing apparatus as set forth in  claim 1 , further comprising 
 a microwave generator configured to generate a microwave for plasma processing of the substrate,    wherein reactive gas is used as the gas for cleaning, and    wherein said microwave generator generates the microwave also when the inside of said process chamber is cleaned.    
     
     
         6 . A substrate processing apparatus as set forth in claim  21 , 
 wherein said first exhaust mechanism exhausts the inside of said process chamber concurrently with the exhaust by said second exhaust mechanism when the gas for cleaning is introduced into said process chamber by said gas introducing mechanism to clean the inside of the chamber.    
     
     
         7 . A substrate processing apparatus as set forth in  claim 2 , further comprising 
 a microwave generator configured to generate a microwave for plasma processing of the substrate,    wherein reactive gas is used as the gas for cleaning, and    wherein said microwave generator generates the microwave also when the inside of said process chamber is cleaned.    
     
     
         8 . A substrate processing apparatus as set forth in  claim 3 , 
 wherein said first exhaust mechanism exhausts the inside of said process chamber concurrently with the exhaust by said second exhaust mechanism when the gas for cleaning is introduced into said process chamber by said gas introducing mechanism to clean the inside of the chamber.    
     
     
         9 . A substrate processing apparatus as set forth in  claim 3 , further comprising 
 a microwave generator configured to generate a microwave for plasma processing of the substrate,    wherein reactive gas is used as the gas for cleaning, and    wherein said microwave generator generates the microwave also when the inside of said process chamber is cleaned.    
     
     
         10 . A substrate processing apparatus as set forth in  claim 4 , further comprising 
 a microwave generator configured to generate a microwave for plasma processing of the substrate,    wherein reactive gas is used as the gas for cleaning, and    wherein said microwave generator generates the microwave also when the inside of said process chamber is cleaned.    
     
     
         11 . A substrate processing apparatus comprising: 
 a process chamber in which a substrate is plasma-processed;    a gas introducing mechanism configured to introduce gas for plasma processing and gas for cleaning into said process chamber;    a holding mechanism having a surface provided in said process chamber and configured to horizontally hold the substrate on the surface;    a first exhaust mechanism having a first exhaust port positioned higher than said surface of the holding mechanism in said process chamber, and configured to exhaust the inside of said process chamber; and    a second exhaust mechanism having a second exhaust port positioned lower than said holding mechanism in said process chamber, and configured to exhaust the inside of said process chamber.    
     
     
         12 . A substrate processing apparatus as set forth in  claim 11 , further comprising 
 a hoisting/lowering mechanism configured to move said holding mechanism upward and downward,    wherein the first exhaust port is positioned higher than said surface of the holding mechanism that has been moved up by said hoisting/lowering mechanism, and    wherein the second exhaust port is positioned lower than said holding mechanism that has been moved down by said hoisting/lowering mechanism.    
     
     
         13 . A substrate processing apparatus as set forth in claim 
 wherein said first exhaust mechanism exhausts the inside of said process chamber concurrently with the exhaust by said second exhaust mechanism when the gas for cleaning is introduced into said process chamber by said gas introducing mechanism to clean the inside of the chamber.    
     
     
         14 . A substrate processing apparatus as set forth in  claim 11 , further comprising 
 a microwave generator configured to generate a microwave for plasma processing of the substrate,    wherein reactive gas is used as the gas for cleaning, and    wherein said microwave generator generates the microwave also when the inside of said process chamber is cleaned.    
     
     
         15 . A substrate processing apparatus as set forth in  claim 12 , 
 wherein said first exhaust mechanism exhausts the inside of said process chamber concurrently with the exhaust by said second exhaust mechanism when the gas for cleaning is introduced into said process chamber by said gas introducing mechanism to clean the inside of the chamber.    
     
     
         16 . A substrate processing apparatus as set forth in  claim 12 , further comprising 
 a microwave generator configured to generate a microwave for plasma processing of the substrate,    wherein reactive gas is used as the gas for cleaning, and    wherein said microwave generator generates the microwave also when the inside of said process chamber is cleaned.    
     
     
         17 . A substrate processing apparatus as set forth in claim  13 , further comprising 
 a microwave generator configured to generate a microwave for plasma processing of the substrate,    wherein reactive gas is used as the gas for cleaning, and    wherein said microwave generator generates the microwave also when the inside of said process chamber is cleaned.    
     
     
         18 . A substrate processing apparatus as set forth in  claim 15 , further comprising 
 a microwave generator configured to generate a microwave for plasma processing of the substrate,    wherein reactive gas is used as the gas for cleaning, and    wherein said microwave generator generates the microwave also when the inside of said process chamber is cleaned.