US2004167239A1PendingUtilityA1

Methods of forming polymeric structures using carbon dioxide and polymeric structures formed thereby

Assignee: UNIV NORTH CAROLINA STATEPriority: Mar 22, 2002Filed: Feb 23, 2004Published: Aug 26, 2004
Est. expiryMar 22, 2022(expired)· nominal 20-yr term from priority
Y10T428/249976Y10T428/249979C08J 2201/0464C08J 2203/06Y10T428/249953C08J 2203/08C08J 9/26Y10T428/249977
38
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Claims

Abstract

Methods of forming a polymeric structure having a plurality of cells therein that include contacting a polymeric material that includes a first phase and a second phase with a composition comprising carbon dioxide to form the polymeric structure having a plurality of cells therein are described. Polymeric materials and microelectronic devices formed by such methods are also described.

Claims

exact text as granted — not AI-modified
That which is claimed is:  
     
         1 . A polymer structure comprising: 
 a polymeric matrix having a plurality of cells therein, wherein the cells in the plurality of cells have an average diameter of from about 1 to 25 nm.    
     
     
         2 . The polymer structure of  claim 1 , wherein the cells in the plurality of cells have an average diameter of from about 2 to 20 nm.  
     
     
         3 . The polymer structure of  claim 1 , wherein the cells in the plurality of cells have an average diameter of from about 3 to 15 nm.  
     
     
         4 . The polymer structure of  claim 1 , wherein the cells in the plurality of cells have an average diameter of from about 4 to 12 nm.  
     
     
         5 . The polymer structure of  claim 1 , wherein the cells in the plurality of cells have an average diameter of from about 3 to 10 nm.  
     
     
         6 . The polymer structure of  claim 1 , wherein the cells in the plurality of cells have an average diameter of from about 5 to 8 nm.  
     
     
         7 . The polymer structure of  claim 1 , wherein the plurality of cells comprise closed cells.  
     
     
         8 . The polymer structure of  claim 1 , wherein the polymeric matrix comprises a polymer selected from the group consisting of a polystyrene, a polyimide, a fluoropolymer, a poly(arylene)ether, a polyphenylene, SiLK™, and combinations thereof.  
     
     
         9 . The polymer structure of  claim 1 , wherein the polymeric matrix has a dielectric constant of about 1.5 to 3.5.  
     
     
         10 . The polymer structure of  claim 1 , wherein the polymeric matrix has a density of cells from about 0.2 to 1 g/cm 3  polymeric material.  
     
     
         11 . A microelectronic device comprising: 
 a dielectric material that comprises a polymeric matrix having a plurality of cells therein, wherein the cells in the plurality of cells have an average diameter of from about 1 to 25 nm.    
     
     
         12 . The microelectronic device of  claim 11 , wherein the cells in the plurality of cells have an average diameter of from about 2 to 20 nm.  
     
     
         13 . The microelectronic device of  claim 11 , wherein the cells in the plurality of cells have an average diameter of from about 3 to 15 nm.  
     
     
         14 . The microelectronic device of  claim 11 , wherein the cells in the plurality of cells have an average diameter of from about 4 to 12 nm.  
     
     
         15 . The microelectronic device of  claim 11 , wherein the cells in the plurality of cells have an average diameter of from about 3 to 10 nm.  
     
     
         16 . The microelectronic device of  claim 11 , wherein the cells in the plurality of cells have an average diameter of from about 5 to 8 nm.  
     
     
         17 . The microelectronic device of  claim 11 , wherein the plurality of cells comprise closed cells.  
     
     
         18 . The microelectronic device of  claim 11 , wherein the polymeric matrix comprises a polymer selected from the group consisting of a polystyrene, a polyimide, a fluoropolymer, a poly(arylene)ether, a polyphenylene, SiLK™, and combinations thereof.  
     
     
         19 . The microelectronic device of  claim 11 , wherein the dielectric material has a dielectric constant of about 1.5 to 3.5.  
     
     
         20 . The microelectronic device of  claim 11 , wherein the polymeric matrix has a density of cells from about 0.2 to 1 g/cm 3  polymeric material.

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