Spindle chuck cleaner

Abstract

Wafer holder cleaning devices, systems and methods that are capable of removing contaminants from a wafer holder. An embodiment includes a particle removal surface on the cleaning device. An embodiment of the surface is a brush. An embodiment includes moving the surface into contact with the wafer holder. An embodiment includes moving the surface into a close, non-contacting relationship to the wafer holder. An embodiment includes a vacuum removing the particles from the wafer holder. In an embodiment, the wafer holder is a spindle chuck. In an embodiment, the spindle chuck is in a fabrication station. In an embodiment, one of the cleaning device and wafer holder rotates.

What is claimed is:  
     
         1 . A method for cleaning a head adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    moving the cleaning surface into contact with the head; and    removing contaminants from the head.    
     
     
         2 . The method of  1 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface into vertical alignment with the head.  
     
     
         3 . The method of  2 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface downwardly onto the head.  
     
     
         4 . The method of  claim 3 , wherein removing contaminants from the head includes rotating the cleaning surface on the head.  
     
     
         5 . The method of  claim 3 , wherein removing contaminants from the head includes rotating the head on the cleaning surface.  
     
     
         6 . The method of  claim 5 , wherein rotating the head includes rotating the head at a variable rpm.  
     
     
         7 . The method of  claim 5 , wherein rotating the head includes rotating the head at at least about 5,000 rpm.  
     
     
         8 . The method of  claim 5 , wherein rotating the head includes rotating the head at about 5,000 rpm.  
     
     
         9 . The method of  claim 6 , wherein rotating the head includes rotating the head at less than about 10,000 rpm.  
     
     
         10 . A method for cleaning a head adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    removing a wafer from the head;    thereafter, moving the cleaning surface into contact with the head; and    removing contaminants from the head.    
     
     
         11 . The method of  10 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface into vertical alignment with the head.  
     
     
         12 . The method of  11 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface downwardly onto the head.  
     
     
         13 . The method of  claim 10 , wherein removing contaminants from the head includes rotating the cleaning surface on the head.  
     
     
         14 . The method of  claim 10 , wherein removing contaminants from the head includes rotating the head on the cleaning surface.  
     
     
         15 . Machine executable code stored on machine readable media, wherein the code comprises: 
 providing a cleaning surface;    moving the cleaning surface into contact with the head; and    removing contaminants from the head.    
     
     
         16 . The code of  15 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface into vertical alignment with the head.  
     
     
         17 . The code of  16 , wherein moving the cleaning surface into contact with the head includes moving the cleaning surface downwardly onto the head.  
     
     
         18 . The code of  claim 15 , wherein removing contaminants from the head includes rotating the cleaning surface on the head.  
     
     
         19 . The code of  claim 15 , wherein removing contaminants from the head includes rotating the head on the cleaning surface.  
     
     
         20 . The code of  claim 15 , wherein moving the cleaning surface into contact with the head is delayed until after removing a wafer from the head.  
     
     
         21 . The code of  claim 20 , wherein the delay is at least 5 seconds.  
     
     
         22 . A method of wafer processing, comprising: 
 placing a wafer on a head of a spindle chuck;    performing a fabrication process on the wafer;    removing the wafer from the head;    automatically cleaning contaminants from the head.    
     
     
         23 . The method of  claim 22 , wherein the recited steps are repeated.  
     
     
         24 . The method of  claim 22 , wherein placing a wafer, performing a fabrication process, and removing a wafer are performed a plurality of times before automatically cleaning contaminants from the head.  
     
     
         25 . The method of  claim 22 , wherein placing a wafer, performing a fabrication process, and removing a wafer are performed are performed on a batch of wafers before automatically cleaning contaminants from the head.  
     
     
         26 . A method of wafer processing, comprising: 
 placing a wafer on a head of a spindle chuck;    performing a fabrication process on the wafer;    removing the wafer from the head;    automatically cleaning contaminants from the head; and    returning the wafer to head.    
     
     
         27 . The method of  claim 26 , wherein the recited steps are repeated.  
     
     
         28 . The method of  claim 26 , wherein removing the wafer from the head, automatically cleaning contaminants from the head, and returning the wafer to head are performed after a plurality of wafers are subjected to the fabrication process.  
     
     
         29 . The method of  claim 27 , wherein removing the wafer from the head, automatically cleaning contaminants from the head, and returning the wafer to head are performed after a batch of wafers are subjected to the fabrication process.  
     
     
         30 . A method of wafer processing, comprising: 
 performing a fabrication process on a batch of wafers, wherein performing the fabrication process includes holding a last wafer in the batch on a spindle chuck and performing a fabrication process on the last wafer;    removing the last wafer from the spindle chuck; and    automatically cleaning the spindle chuck.    
     
     
         31 . The method of  claim 30 , further comprising setting a first wafer in a subsequent batch of wafers on the spindle chuck after both removing the last wafer from the spindle chuck and automatically cleaning engaging the spindle chuck with a cleaning head.  
     
     
         32 . The method of  claim 31 , wherein the performing a fabrication process and automatically cleaning the spindle chuck are repeated for the subsequent batch.  
     
     
         33 . A method for cleaning a support adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    moving the cleaning surface into contact with the support; and    removing contaminants from the support.    
     
     
         34 . The method of  33 , wherein moving the cleaning surface into contact with the support includes moving the cleaning surface into vertical alignment with the support.  
     
     
         35 . The method of  claim 33 , wherein moving the cleaning surface into contact with the support includes moving the cleaning surface into coaxial alignment with the support.  
     
     
         36 . The method of  claim 33 , wherein moving the cleaning surface into contact with the support includes moving the cleaning surface downwardly onto the support.  
     
     
         37 . The method of  claim 33 , wherein the support has wafer supporting upper surface.  
     
     
         38 . The method of  claim 37 , wherein the surface is a metal surface.  
     
     
         39 . The method of  claim 37 , wherein the surface is a steel surface.  
     
     
         40 . The method of  claim 37 , wherein the surface is a plastic.  
     
     
         41 . The method of  claim 37 , wherein the surface includes polytetrafluoroethylene.  
     
     
         42 . The method of  claim 37 , wherein the surface is homopolymer acetal.  
     
     
         43 . A method for cleaning a support adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    moving the cleaning surface into contact with the support; and    rotating the support on the cleaning surface.    
     
     
         44 . The method of  claim 43 , wherein rotating the support includes rotating the support at a variable rpm.  
     
     
         45 . The method of  claim 43 , wherein rotating the support includes rotating the support at at least about 5,000 rpm.  
     
     
         46 . The method of  claim 43 , wherein rotating the support includes rotating the support at about 5,000 rpm.  
     
     
         47 . The method of  claim 43 , wherein rotating the support includes rotating the support at less than about 10,000 rpm.  
     
     
         48 . The method of  claim 43 , wherein rotating the support includes activating a spin motor.  
     
     
         49 . A method for cleaning a support adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    moving the cleaning surface into contact with the support; and    rotating the cleaning surface on the support.    
     
     
         50 . The method of  claim 49 , wherein rotating the cleaning surface includes rotating the support at a variable rpm.  
     
     
         51 . The method of  claim 49 , wherein rotating the cleaning surface includes rotating the support at at least about 5,000 rpm.  
     
     
         52 . The method of  claim 49 , wherein rotating the cleaning surface includes rotating the support at about 5,000 rpm.  
     
     
         53 . The method of  claim 49 , wherein rotating the cleaning surface includes rotating the support at less than about 10,000 rpm.  
     
     
         54 . The method of  claim 49 , wherein rotating the cleaning surface includes activating a spin motor.  
     
     
         55 . A method for cleaning a support adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    removing a wafer from the support;    thereafter, moving the cleaning surface into contact with the support; and    removing contaminants from the support.    
     
     
         56 . The method of  55 , wherein moving the cleaning surface into contact with the support includes moving the cleaning surface into vertical alignment with the support.  
     
     
         57 . The method of  56 , wherein moving the cleaning surface into contact with the support includes moving the cleaning surface downwardly onto the support.  
     
     
         58 . The method of  claim 55 , wherein removing contaminants from the support includes rotating the cleaning surface on the support.  
     
     
         59 . The method of  claim 55 , wherein removing contaminants from the support includes rotating the support on the cleaning surface.  
     
     
         60 . The method of  claim 55 , wherein removing contaminants from the support includes activating a vacuum source.  
     
     
         61 . The method of  claim 60 , wherein activating a vacuum source includes activating a vacuum source when the cleaning surface contacts the support.  
     
     
         62 . The method of  claim 60 , wherein activating a vacuum source includes activating a vacuum source when the support contacts the cleaning surface.  
     
     
         63 . A method for cleaning a support adapted to releasably hold a wafer, comprising: 
 providing a cleaning surface;    removing a wafer from the support;    thereafter, positioning the cleaning surface adjacent the support; and    activating a vacuum source.    
     
     
         64 . The method of  claim 63 , wherein the activating a vacuum source further comprises generating a vacuum when the cleaning surface is adjacent the support.  
     
     
         65 . The method of  claim 63 , wherein the positioning the cleaning surface includes: positioning the cleaning surface a set distance from the support; and generating a vacuum when the cleaning surface is the set distance from the support.  
     
     
         66 . The method of  claim 65 , wherein the set distance is about 0.2 microns.  
     
     
         67 . The method of  claim 65 , wherein the set distance is less then about 0.2 microns.  
     
     
         68 . The method of  claim 63 , wherein the activating a vacuum source includes generating a vacuum when the cleaning surface is vertically aligned with the support.  
     
     
         69 . Machine executable code stored on machine readable media, wherein the code comprises: 
 providing a cleaning surface;    moving the cleaning surface into contact with the support; and    removing contaminants from the support.    
     
     
         70 . The code of  69 , wherein moving the cleaning surface into contact with the support includes moving the cleaning surface into vertical alignment with the support.  
     
     
         71 . The code of  70 , wherein moving the cleaning surface into contact with the support includes moving the cleaning surface downwardly onto the support.  
     
     
         72 . The code of  claim 69 , wherein removing contaminants from the support includes rotating the cleaning surface on the support.  
     
     
         73 . The code of  claim 69 , wherein removing contaminants from the support includes rotating the support on the cleaning surface.  
     
     
         74 . The code of  claim 69 , wherein removing contaminants from the support includes activating a vacuum source.  
     
     
         75 . The code of  claim 69 , wherein the activating a vacuum source includes activating a vacuum source when the support contacts the cleaning surface.  
     
     
         76 . The code of  claim 69 , wherein the activating a vacuum source includes activating a vacuum source when the cleaning surface contacts the support.  
     
     
         77 . The code of  claim 69 , wherein the activating a vacuum source includes generating a vacuum when the cleaning surface is a set distance from the head.  
     
     
         78 . The code of  claim 77 , wherein the set distance is about 0.2 microns.  
     
     
         79 . The code of  claim 77 , wherein the set distance is less then about 0.2 microns.  
     
     
         80 . The code of  claim 69 , wherein the activating a vacuum source includes generating a vacuum when the cleaning surface is vertically aligned with the support.  
     
     
         81 . The code of  claim 69 , wherein moving the cleaning surface into contact with the support is delayed until after removing a wafer from the support.  
     
     
         82 . The code of  claim 74 , wherein the delay is at least 5 seconds.  
     
     
         83 . A method of wafer processing, comprising: 
 placing a wafer on a support of a spindle chuck;    performing a fabrication process on the wafer;    removing the wafer from the support;    automatically cleaning contaminants from the support.    
     
     
         84 . The method of  claim 83 , wherein the recited steps are repeated.  
     
     
         85 . The method of  claim 83 , wherein placing a wafer, performing a fabrication process, and removing a wafer are performed a plurality of times before automatically cleaning contaminants from the support.  
     
     
         86 . The method of  claim 83 , wherein placing a wafer, performing a fabrication process, and removing a wafer are performed on a batch of wafers before automatically cleaning contaminants from the support.  
     
     
         87 . The method of  claim 83 , wherein placing a wafer, performing a fabrication process, and removing a wafer are preformed on a plurality of batches of wafers before automatically cleaning contaminants from the support.  
     
     
         88 . A method of wafer processing, comprising: 
 placing a wafer on a support of a spindle chuck;    performing a fabrication process on the wafer;    removing the wafer from the support;    automatically cleaning contaminants from the support; and    returning the wafer to support.    
     
     
         89 . The method of  claim 88 , wherein the recited steps are repeated.  
     
     
         90 . The method of  claim 88 , wherein removing the wafer from the support, automatically cleaning contaminants from the support, and returning the wafer to support are performed after a plurality of wafers are subjected to the fabrication process.  
     
     
         91 . The method of  claim 88 , wherein removing the wafer from the support, automatically cleaning contaminants from the support, and returning the wafer to support are performed after a batch of wafers are subjected to the fabrication process.  
     
     
         92 . The method of  claim 88 , wherein removing the wafer from the support, automatically cleaning contaminants from the support, and returning the wafer to support are performed after a plurality of batches of wafers are subjected to the fabrication process.  
     
     
         93 . A method of wafer processing, comprising: 
 performing a fabrication process on a batch of wafers, wherein performing the fabrication process includes holding a last wafer in the batch on a spindle chuck and performing a fabrication process on the last wafer;    removing the last wafer from the spindle chuck; and    automatically cleaning the spindle chuck.    
     
     
         94 . The method of  claim 93 , further comprising setting a first wafer in a subsequent batch of wafers on the spindle chuck after both removing the last wafer from the spindle chuck and automatically cleaning the spindle chuck.  
     
     
         95 . The method of  claim 93 , wherein the performing a fabrication process and automatically cleaning the spindle chuck are repeated for the subsequent batch.  
     
     
         96 . The method of  claim 94 , wherein the recited steps are repeated.  
     
     
         97 . A method of wafer processing, comprising: 
 performing a fabrication process on a plurality of batches of wafers, wherein performing the fabrication process includes holding a last wafer in the last batch of a plurality of batches on a spindle chuck and performing a fabrication process on the last wafer;    removing the last wafer from the spindle chuck; and    automatically cleaning the spindle chuck.    
     
     
         98 . The method of  claim 97 , further comprising setting a first wafer in a subsequent plurality of batches of wafers on the spindle chuck after both removing the last wafer in the last batch of a plurality of batches from the spindle chuck and automatically cleaning the spindle chuck.  
     
     
         99 . The method of  claim 97 , wherein the performing a fabrication process and automatically cleaning the spindle chuck are repeated for the subsequent batch.  
     
     
         100 . The method of  claim 98 , wherein the recited steps are repeated.