US2004155278A1PendingUtilityA1

Semiconductor device, apparatus and method for manufacturing the same

41
Priority: Feb 10, 2003Filed: Apr 10, 2003Published: Aug 12, 2004
Est. expiryFeb 10, 2023(expired)· nominal 20-yr term from priority
Inventors:Katsuaki NatoriKeisuke NakazawaKoji YamakawaHiroyuki KanayaYoshinori KumuraHiroshi ItokawaOsamu Arisumi
H10P 72/0436C23C 14/5806H10D 1/694C23C 14/08H10B 53/30H10B 53/00
41
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Claims

Abstract

An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . An apparatus for manufacturing a semiconductor device, comprising: 
 a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound;    a heater which heats the substrate held in the chamber; and    an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.    
     
     
         2 . The apparatus according to  claim 1 , wherein the film is made of the metal element or a metal compound containing the metal element.  
     
     
         3 . The apparatus according to  claim 1 , wherein the metal element is at least one kind of metal element included in groups II-A, IV-B, VII-B, VIII and I-B.  
     
     
         4 . The apparatus according to  claim 1 , wherein the adsorbent contains the metal element.  
     
     
         5 . The apparatus according to  claim 1 , wherein the adsorbent contains at least one kind of metal element of a group IV-B.  
     
     
         6 . The apparatus according to  claim 1 , wherein the adsorbent adheres to an inner wall surface of the chamber.  
     
     
         7 . The apparatus according to  claim 3 , wherein the metal element is at least one of Ru, Sr, Ti, Pt, Re, Ir, Os, Pb, Rh and Au.  
     
     
         8 . The apparatus according to  claim 4 , wherein the adsorbent is a metal compound containing the metal element.  
     
     
         9 . The apparatus according to  claim 5 , wherein the adsorbent is Ti.  
     
     
         10 . A method of manufacturing a semiconductor device, comprising: 
 providing an adsorbent in a chamber holding a to-be-processed substrate and heating the substrate, the substrate having a film containing at least one kind of metal element which will become a component of volatile a metal compound; and    causing the adsorbent to adsorb the volatile metal compound generated from the film by heating the substrate.    
     
     
         11 . The method according to  claim 10 , wherein a dummy substrate having a film containing the metal element is heated in the chamber, and the adsorbent adheres to an inner wall surface of the chamber.  
     
     
         12 . The method according to  claim 10 , wherein the adsorbent is deposited directly on an inner wall surface of the chamber and adheres thereto.  
     
     
         13 . The method according to  claim 10 , wherein the adsorbent is applied to an inner wall surface of the chamber by sputtering or CVD.  
     
     
         14 . A semiconductor device comprising: 
 a semiconductor substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, the semiconductor substrate having being heated by an apparatus for manufacturing a semiconductor device, the apparatus comprising: 
 a chamber which holds the semiconductor substrate;  
 a heater which heats the semiconductor substrate held in the chamber; and  
 an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the semiconductor substrate.  
   
     
     
         15 . The device according to  claim 14 , wherein the film is made of the metal element or a metal compound containing the metal element.  
     
     
         16 . The device according to  claim 14 , wherein the metal element is at least one kind of metal element included in groups II-A, IV-B, VII-B, VIII and I-B.  
     
     
         17 . The device according to  claim 14 , wherein the adsorbent contains the metal element.  
     
     
         18 . The device according to  claim 14 , wherein the adsorbent contains at least one kind of metal element of a group IV-B.  
     
     
         19 . The device according to  claim 14 , wherein the adsorbent adheres to an inner wall surface of the chamber.  
     
     
         20 . The device according to  claim 14 , wherein the film contacts a capacitor insulating film provided in a capacitor electrode of a capacitor device.  
     
     
         21 . The device according to  claim 16 , wherein the metal element is at least one of Ru, Sr, Ti, Pt, Re, Ir, Os, Pb, Rh and Au.  
     
     
         22 . The device according to  claim 17 , wherein the adsorbent is metal compound containing the metal element.  
     
     
         23 . The device according to  claim 18 , wherein the adsorbent is Ti.  
     
     
         24 . The device according to  claim 20 , wherein the capacitor insulating film is a ferroelectric film.  
     
     
         25 . A semiconductor device comprising: 
 a semiconductor substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, the semiconductor substrate having being heated by a method of manufacturing a semiconductor device, the method comprising: 
 providing an adsorbent in a chamber holding the semiconductor substrate and heating the semiconductor substrate; and  
 causing the adsorbent to adsorb the volatile metal compound generated from the film by heating the semiconductor substrate.  
   
     
     
         26 . The device according to  claim 25 , wherein a dummy substrate having a film containing the metal element is heated in the chamber, and the adsorbent adheres to an inner wall surface of the chamber.  
     
     
         27 . The device according to  claim 25 , wherein the adsorbent is deposited directly on an inner wall surface of the chamber and adheres thereto.  
     
     
         28 . The device according to  claim 25 , wherein the adsorbent is applied to an inner wall surface of the chamber by sputtering or CVD.  
     
     
         29 . The device according to  claim 25 , wherein the film contacts a capacitor insulating film provided in a capacitor electrode of a capacitor device.  
     
     
         30 . The device according to  claim 29 , wherein the capacitor insulating film is a ferroelectric film.

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