US2004154230A1PendingUtilityA1
Polishing formulations for SiO2-based substrates
Est. expiryJul 19, 2022(expired)· nominal 20-yr term from priority
C09G 1/02C03C 19/00C09K 3/1445
50
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Claims
Abstract
Powders of particles comprising a ceramic core and a coating of ceria deposited thereon provide an economical and effective abrasive for glass polishing formulations.
Claims
exact text as granted — not AI-modifiedWe claim:
1 . Abrasive powder particles each comprising a core particle of a ceramic material with a shell of ceria deposited thereon such that the ceria represents from 2 to 40% of the particle weight.
2 . Abrasive powder according to claim 1 in which the ceria represents from 3 to 20% of the particle weight.
3 . Abrasive powder according to claim 1 in which the ceramic providing the core particles is selected from the group consisting of silica, alumina, zirconia, silicon carbide, calcium oxide, rare earth metal oxides and mixtures thereof.
4 . Abrasive powder according to claim 4 in which the ceramic providing the core particles is fumed silica and colloidal silica.
5 . A glass polishing formulation comprising a dispersion medium and abrasive powder particles each comprising a core particle of a ceramic material with a shell of ceria deposited thereon such that the ceria represents from 2 to 40% of the particle weight, the powder being present in then formulation in an amount of from 2 to 20% by weight.
6 . A glass polishing formulation according to claim 5 in which the pH is adjusted to at least pH 8.
7 . A process for the production of a glass polishing abrasive powder comprising ceramic core particles and a shell of ceria deposited thereon which comprises mixing a powder of the ceramic core particles with a solution of a soluble salt of cerium; adjusting the pH of the dispersion to at least a pH of 8; aging the dispersion at a temperature of from 60 to 95° C. until the pH has stabilized above 8; separating and drying the solids content of the dispersion; and firing the dried solids at a temperature of from 600 to 1000° C.Join the waitlist — get patent alerts
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