US2004150082A1PendingUtilityA1

Semiconductor device

43
Priority: Jan 28, 1999Filed: Jan 16, 2004Published: Aug 5, 2004
Est. expiryJan 28, 2019(expired)· nominal 20-yr term from priority
Inventors:Ryoichi KajiwaraMasahiro KoizumiToshiaki MoritaKazuya TakahashiMunehisa KishimotoShigeru IshiiToshinori HirashimaYasushi TakahashiToshiyuki HataHiroshi SatoKeiichi Ookawa
H10W 72/5524H10W 72/07653H10W 72/552H10W 74/00H10W 74/127H10W 72/0198H10W 72/877H10W 72/07141H10W 72/29H10W 72/59H10W 72/30H10W 72/07636H10W 72/07337H10W 72/074H10W 72/07336H10W 72/07236H10W 72/073H10W 72/07327H10W 72/07232H10W 72/07233H10W 72/354H10W 72/325H10W 72/352H10W 72/332H10W 72/331H10W 72/381H10W 90/726H10W 72/251H10W 72/252H10W 72/012H10W 72/20H10W 72/01225H10W 90/736H10W 72/631H10W 70/481H10W 70/457H10W 70/424H10W 74/111H10W 74/016H10W 72/071H10W 74/014H05K 3/3426H10W 90/764H10W 74/01H10W 70/465H10W 99/00H10W 90/811H10W 70/40H10W 70/429H10D 30/601
43
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Claims

Abstract

A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Claims

exact text as granted — not AI-modified
What we claim is:  
     
         1 . A semiconductor device comprising: 
 a semiconductor substrate; and    a semiconductor element which comprises:    a first electrode provided on a front plane of said semiconductor substrate, and    a second electrode provided on a rear plane of said semiconductor substrate;    a first metallic member connected to said first electrode; and    a second metallic member connected to said second electrode; wherein    said second electrode is connected to said second metallic member via a metallic layer containing precious metal, and    said metallic layer is a composite metal layer comprised of a first precious metal layer provided at the front plane of said second electrode and a second precious metal layer adhered thereto by compression bonding provided at the front plane of said second metallic member.    
     
     
         2 . A semiconductor device comprising: 
 a semiconductor chip; and    a metallic member connected to a chip electrode, wherein:    said chip electrode is composed of any of an Al film and an Al alloy film;    a bonding front plane of said metallic member is composed of a plated precious metal film;    said chip electrode is bonded metallically to said metallic member via Au bumps; and    at least 80% of an area of a respective Au/Al bonding region is contacting a Au bump, said bonding region being made of an Au/Al alloy layer in the thickness direction.

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