Airu spattering target and method for preparation thereof

Abstract

The present invention pertains to an AlRu sputtering target characterized in that it is a sintered body composed of an AlRu intermetallic compound of 95 vol. % or more, and an object thereof is to enable the stable and low-cost manufacture of an AlRu sputtering target having an even texture and capable of significantly reducing oxygen, and to prevent or suppress the generation of particles and improve the yield ratio of deposition goods.

1 . An AlRu sputtering target characterized in that it is a sintered body composed of an AlRu intermetallic compound of 95 vol. % or more.  
     
     
         2 . An AlRu sputtering target according to  claim 1 , characterized in that the oxygen content is 1500 wtppm or less.  
     
     
         3 . An AlRu sputtering target according to  claim 1  or  claim 2 , characterized in that the relative density is 90% or more.  
     
     
         4 . A manufacturing method of an AlRu sputtering target, characterized in performing high frequency dissolution to raw materials Al and Ru, preparing powder having as its principal component an Al 13 Ru 4  intermetallic compound by pulverizing the ingot after dissolution or with the atomization method, and, after mixing Ru powder to this powder having as its principal component an Al 13 Ru 4  intermetallic compound, performing sintering by hot pressing or hot isostatic pressing (HIP).  
     
     
         5 . A manufacturing method of an AlRu sputtering target according to  claim 4 , characterized in that the oxygen content in the hot metal or ingot as a result of high frequency dissolution is 100 wtppm or less.  
     
     
         6 . A manufacturing method of an AlRu sputtering target according to  claim 4  or  claim 5 , characterized in that sintering is performed at 1300 to 1500° C.  
     
     
         7 . A manufacturing method of an AlRu sputtering target according to each of  claims 4  to  6 , characterized in that sintering is performed at a sintering pressure of 150 Kgf/cm 2  or more.  
     
     
         8 . A manufacturing method of an AlRu sputtering target according to each of  claims 4  to  7 , characterized in that sintering is performed with powder having an average particle size of 50 to 100 μm.  
     
     
         9 . A manufacturing method of an AlRu sputtering target according to each of  claims 4  to  8 , characterized in that sintering is performed in a vacuum.  
     
     
         10 . A manufacturing method of an AlRu sputtering target according to each of  claims 4  to  9 , characterized in that the oxygen content of the target is 1500 wtppm or less.  
     
     
         11 . A manufacturing method of an AlRu sputtering target according to each of  claims 4  to  10 , characterized in that the target is a sintered body composed of an AlRu intermetallic compound of 95 vol. % or more.  
     
     
         12 . A manufacturing method of an AlRu sputtering target according to each of  claims 4  to  11 , characterized in that the relative density is 90% or more.