Methods of manufacturing semiconductor devices

Abstract

Methods of manufacturing semiconductors are disclosed. One example method includes forming a trench through a dual damascene process, depositing a barrier metal layer on the overall surface, and depositing copper in the trench to form a copper line. The example method may also include performing a wet etching process to remove the top portion of the copper line, depositing a barrier layer on the etched copper line, and performing a planarization process to flatten the barrier layer.

What is claimed is:  
     
         1 . A method for manufacturing a semiconductor device comprising: 
 forming a trench through a dual damascene process;    depositing a barrier metal layer on an overall surface, the barrier metal layer preventing diffusion of copper;    depositing copper in the trench to form a copper line;    performing a wet etching process to remove a top portion of the copper line;    depositing a barrier layer on the etched copper line; and    performing a planarization process such as chemical mechanical polishing (CMP) or an etch back process to flatten the barrier layer.    
     
     
         2 . A method as defined by  claim 1 , wherein the barrier layer is formed of SiN or SiC.  
     
     
         3 . A method as defined by  claim 1 , wherein the copper is deposited by at least one of electroplating and chemical vapor deposition (CVD).  
     
     
         4 . A method as defined by  claim 1 , wherein the wet etching is performed using hydrochloric acid, dilute sulfuric acid, or aqueous ammonia.