Combined semiconductor apparatus with semiconductor thin film

Abstract

A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.

What is claimed is:  
     
         1 . A combined semiconductor apparatus comprising: 
 a semiconductor substrate having an integrated circuit;    a planarized region formed in a surface of said semiconductor substrate; and    a semiconductor thin film including at least one semiconductor device and bonded on said planarized region.    
     
     
         2 . The combined semiconductor apparatus according to  claim 1 , wherein said planarized region is a part of said surface of said semiconductor substrate which has been subjected to a planarizing process.  
     
     
         3 . The combined semiconductor apparatus according to  claim 1 , wherein said planarized region is disposed above said integrated circuit of said semiconductor substrate.  
     
     
         4 . The combined semiconductor apparatus according to  claim 1 , wherein said planarized region is disposed in a region of said semiconductor substrate adjacent to said integrated circuit of said semiconductor substrate.  
     
     
         5 . The combined semiconductor apparatus according to  claim 1 , further comprising a planarized film disposed between said planarized region and said semiconductor thin film, wherein a surface of said planarized film on a side of said semiconductor thin film has been subjected to a planarizing process.  
     
     
         6 . The combined semiconductor apparatus according to  claim 5 , wherein said planarized film includes: 
 an electrically conductive layer; and    an interdielectric layer formed in a region peripheral to said electrically conductive layer.    
     
     
         7 . The combined semiconductor apparatus according to  claim 1 , wherein a first surface of said semiconductor thin film, in which said semiconductor device is formed, is disposed on a side of said planarized region of said semiconductor substrate.  
     
     
         8 . The combined semiconductor apparatus according to  claim 7 , wherein said semiconductor thin film includes a common electrode layer on a second surface of said semiconductor thin film opposed to said first surface, and said integrated circuit has a common electrode terminal; 
 said apparatus further comprising a common interconnecting layer formed on a region extending from an upper surface of said common electrode layer of said semiconductor thin film to said common electrode terminal of said integrated circuit.    
     
     
         9 . The combined semiconductor apparatus according to  claim 1 , wherein said semiconductor thin film has a common electrode layer on a second surface of the semiconductor thin film opposed to a first surface of the semiconductor thin film, in which said semiconductor device is formed, and 
 said second surface of said semiconductor thin film is disposed on a side of said planarized region of said semiconductor substrate.    
     
     
         10 . The combined semiconductor apparatus according to  claim 9 , wherein said integrated circuit includes individual electrode terminals; 
 said apparatus further comprising individual interconnecting lines formed on a region extending from an upper surface of said semiconductor device to said individual electrode terminal.    
     
     
         11 . A combined semiconductor apparatus comprising: 
 a semiconductor substrate;    an integrated circuit device disposed on said semiconductor substrate;    a raised layer formed on a surface of said semiconductor substrate in a region adjacent to said integrated circuit device, an upper surface of said raised layer being at a position higher than an upper surface of said integrated circuit device; and    a semiconductor thin film bonded on the upper surface of said raised layer.    
     
     
         12 . A combined semiconductor apparatus comprising: 
 a semiconductor substrate having an integrated circuit; and    a semiconductor thin film including at least one semiconductor device and bonded on said semiconductor substrate;    wherein a first surface of said semiconductor thin film, in which said semiconductor device is formed, is disposed on a side of said semiconductor substrate.    
     
     
         13 . The combined semiconductor apparatus according to  claim 12 , further comprising an electrically conductive layer disposed between said semiconductor substrate and said semiconductor thin film.  
     
     
         14 . The combined semiconductor apparatus according to  claim 13 , further comprising an interdielectric layer disposed between said semiconductor substrate and said semiconductor thin film and in a region peripheral to said electrically conductive layer.  
     
     
         15 . The combined semiconductor apparatus according to  claim 12 , wherein said semiconductor thin film includes a common electrode layer on a second surface of said semiconductor thin film opposed to said first surface, and said integrated circuit has a common electrode terminal; 
 said apparatus further comprising a common interconnecting layer formed on a region extending from an upper surface of said common electrode layer of said semiconductor thin film to said common electrode terminal of said integrated circuit.    
     
     
         16 . The combined semiconductor apparatus according to  claim 1 , wherein said semiconductor thin film is made of compound semiconductor as a main materials.  
     
     
         17 . The combined semiconductor apparatus according to  claim 1 , wherein said at least one semiconductor device is any of a light-emitting element, a light-sensing element, a Hall element and a piezoelectric element, and said integrated circuit includes a driving-IC for driving said at least one semiconductor device.  
     
     
         18 . The combined semiconductor apparatus according to  claim 1 , wherein said at least one semiconductor device is a plurality of said semiconductor devices arranged in said semiconductor thin film.  
     
     
         19 . The combined semiconductor apparatus according to  claim 1 , wherein said at least one semiconductor device is a single semiconductor device disposed in said semiconductor thin film.  
     
     
         20 . An optical print head including the combined semiconductor apparatus of  claim 1 .  
     
     
         21 . An optical print head including the combined semiconductor apparatus of  claim 11 .  
     
     
         22 . An optical print head including the combined semiconductor apparatus of  claim 12 .  
     
     
         23 . An image-forming apparatus comprising at least one optical print head including the combined semiconductor apparatus of  claim 1 .  
     
     
         24 . An image-forming apparatus comprising at least one optical print head including the combined semiconductor apparatus of  claim 11 .  
     
     
         25 . An image-forming apparatus comprising at least one optical print head including the combined semiconductor apparatus of  claim 12.