US2004131888A1PendingUtilityA1
Magnetic sensor
Est. expiryJun 12, 2020(expired)· nominal 20-yr term from priority
H10D 48/385G11B 2005/3996G01R 33/093B82Y 25/00G11B 5/3903B82Y 10/00Y10T428/1107
37
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Claims
Abstract
A magnetic sensor senses an external magnetic field using a spin-filtered sensor current flowing through a non-magnetic layer.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A magnetic sensor that senses an external magnetic field using a spin-filtered sensor current flowing through a non-magnetic layer.
2 . The magnetic sensor as claimed in claim 1 , further comprising:
a pair of ferromagnetic bodies provided on the non-magnetic layer and positioned parallel to an axis of magnetization of each of the ferromagnetic bodies; and a power source that uses the ferromagnetic bodies as electrodes to supply the sensor current.
3 . The magnetic sensor as claimed in claim 1 , wherein:
a ferromagnetic film is provided on the non-magnetic layer; and an axis of magnetization of the ferromagnetic layer is formed either parallel to or opposite to a direction of electron spin of the sensor current.
4 . The magnetic sensor as claimed in claim 3 , wherein the ferromagnetic layer is formed as a free layer constituting either an anisotropic magneto-resistive film or a giant magneto-resistive film.
5 . The magnetic sensor as claimed in claim 4 , wherein the giant magneto-resistive film constitutes a spin-valve structure.
6 . The magnetic sensor as claimed in claim 4 , wherein the non-magnetic layer is formed from a material selected from a group consisting of aluminum, copper, chromium, or an alloy of these metals.
7 . The magnetic sensor as claimed in claim 2 , wherein:
the non-magnetic layer is formed of a semiconductor material; and the axis of magnetization of one of the pair of ferromagnetic bodies changes so as to detect an external magnetic field.
8 . The magnetic sensor as claimed in claim 7 , wherein the semiconductor material is indium aluminum arsenide.
9 . The magnetic sensor as claimed in claim 7 , wherein the semiconductor material is indium gallium arsenide.
10 . The magnetic sensor as claimed in claim 1 , wherein the ferromagnetic body is formed from a material selected from a group consisting of iron, cobalt, nickel, or an alloy of these metals.
11 . A device for magnetically recording and reproducing information to and from a recording medium, the magnetic head unit comprising a magnetic sensor that senses an external magnetic field using a spin-filtered sensor current flowing through a non-magnetic layer.Join the waitlist — get patent alerts
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