Apparatus and method for manufacturing silicon nanodot film for light emission

Abstract

A method and apparatus for manufacturing a silicon nanodot thin film having uniform doping concentration without damage by depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by sputtering process at the same time. The silicon nanodot film obtained by the present invention has an improved light emitting characteristic in long distance communication frequency range of 1.54 μm as well as visible light range.

What is claimed is:  
     
         1 . An apparatus for manufacturing a silicon nanodot film for light emission, comprising: 
 a chamber having a gas supplying port and a gas exhaust port;    a showerhead connected to said gas supplying port and disposed in said chamber;    a stage disposed within said chamber positioned to be opposed to said showerhead and on which a substrate is mounted; and    a sputter gun disposed within said chamber for sputtering a light emitting material while a matrix thin film is deposited on said substrate by plasma generated between said showerhead and said substrate.    
     
     
         2 . The apparatus as claimed in  claim 1 , 
 wherein said chamber has a plurality of said sputter guns.    
     
     
         3 . A method for manufacturing a silicon nanodot film for light emission, comprising: 
 (a) placing a substrate on a stage within a chamber; and    (b) depositing a matrix thin film on said substrate by implanting a reaction gas into said chamber and generating plasma, while doping said deposited matrix thin film with a light emitting material by sputtering said light emitting material into said chamber.    
     
     
         4 . The method as claimed in  claim 3 , 
 wherein said matrix thin film is based on one of silicon, silicon oxide, nitride, and carbide.    
     
     
         5 . The method as claimed in  claim 3 , 
 wherein said light emitting material is at least one of a rare earth metal, an insulating material, and a compound including a rare earth metal and an insulating material.    
     
     
         6 . The method as claimed in  claim 5 , 
 wherein said rare earth metal is Erbium.