Polishing method for semiconductor device, method for fabricating semiconductor device and polishing system

Abstract

A method for fabricating a semiconductor device, which includes the process step of polishing a substrate using CMP. To suppress the generation of scars and scratches on a wafer surface, in the polishing process, a tube-type slurry supply pump 15 is used to supply slurry. Then, in the tube-type slurry supply pump 15 , a vinyl chloride type tube is used as a tube 12 for supplying a slurry.

What is claimed is:  
     
         1 . A polishing method which is part of a method for fabricating a semiconductor device, the fabrication method including the process step of polishing a substrate using CMP, 
 wherein in the polishing process step, a tube-type slurry supply pump is used for supplying a slurry, and    wherein in the tube-type slurry supply pump, a vinyl chloride type tube is used as a tube for supplying the slurry.    
     
     
         2 . The polishing method of  claim 1 , wherein the vinyl chloride type tube substantially does not contain fine particles for reinforcing the strength of the tube.  
     
     
         3 . A polishing method which is part of a method for fabricating a semiconductor device, the fabrication method including the process step of polishing a substrate using CMP, 
 wherein in the polishing process step, a tube-type slurry supply pump is used for supplying a slurry, and    wherein in the tube-type slurry supply pump, a tube including the inner surface formed of a vinyl chloride type tube and the outer surface formed of a rubber type tube is used as a tube for supplying the slurry.    
     
     
         4 . The polishing method of  claim 3 , wherein the vinyl chloride type tube substantially does not contain fine particles for reinforcing the strength of the tube.  
     
     
         5 . A polishing method which is part of a method for fabricating a semiconductor device, the fabrication method including the process step of polishing a substrate using CMP, 
 wherein in the polishing process step, a tube-type slurry supply pump is used for supplying a slurry, and    wherein a filter for removing aggregate particles and a foreign substance contained in the slurry is disposed downstream of the slurry supply pump.    
     
     
         6 . The polishing method of  claim 5 , wherein in the tube-type slurry supply pump, a tube in which at least the inner surface is formed of a vinyl chloride material is used as a tube for supplying the slurry.  
     
     
         7 . A polishing method which is part of a method for fabricating a semiconductor device, the fabrication method including the process step of polishing a substrate using CMP, 
 wherein in the polishing process step, a tube-type slurry supply pump is used for supplying a slurry, and    wherein in the tube-type slurry supply pump, a tube which substantially does not contain fine particles for reinforcing the strength of the tube is used as a tube for supplying the slurry.    
     
     
         8 . The polishing method of  claim 7 , wherein the tube is a vinyl chloride type tube or a silicon rubber type tube.  
     
     
         9 . A method for fabricating a semiconductor device, comprising the polishing method of any one of claims  1  through  8 .  
     
     
         10 . A system for polishing a substrate using CMP, comprising: 
 a CMP apparatus for polishing the substrate; and    a tube-type slurry supply pump for supplying a slurry during polishing,    wherein a tube for the tube-type slurry supply pump is a tube in which at least the inner surface is formed of a vinyl chloride material.    
     
     
         11 . The polishing system of  claim 10 , wherein the tube has a two-layer structure, and 
 wherein the inner surface of the tube is formed of a vinyl chloride material and the outer surface of the tube is formed of a rubber material.    
     
     
         12 . A system for polishing a substrate using CMP, comprising: 
 a CMP apparatus for polishing the substrate;    a slurry supply apparatus for supplying a slurry to the CMP apparatus;    a pipe for connecting the slurry supply apparatus and the CMP apparatus; and    a tube-type slurry supply pump disposed in part of the pipe,    wherein a filter for removing at least aggregate particles or a foreign substance contained in the slurry is disposed between the tube-type slurry supply pump and the CMP apparatus.    
     
     
         13 . The polishing system of  claim 12 , wherein a tube for the tube-type slurry supply pump is a tube in which at least the inner surface is formed of a vinyl chloride material.  
     
     
         14 . A system for polishing a substrate using CMP, comprising: 
 a CMP apparatus for polishing the substrate; and    a tube-type slurry supply pump for supplying a slurry during polishing,    wherein a tube for the tube-type slurry supply pump substantially does not contain fine particles for reinforcing the strength of the tube.