Processing apparatus

Abstract

Openings are formed at the bottom of an anodizing container. A shower-type current path forming mechanism is arranged at the lower portion of the anodizing container. The mechanism has a pressure vessel. A shower head is arranged at the upper portion of the pressure vessel. A conductive solution in a shower form is injected or discharged from the shower head to form a liquid electrode under the lower surface of a substrate. Accordingly, a current flows between a cathode and an anode to anodize the substrate. The apparatus also has a mechanism which makes a chemical solution overflow from a chemical solution container to form a flow of the chemical solution near the lower surface of the substrate.

What is claimed is:  
     
         1 . A processing apparatus which has a first electrode and a second electrode, arranges a substrate between the first and second electrodes, and supplies a current between the first and second electrodes through a chemical solution and the substrate to process the substrate, comprising: 
 a shower head which is arranged between the first electrode and the substrate to form a chemical solution flow in a shower form toward the substrate,    wherein the chemical solution flow in the shower form formed by said shower head forms part of a current path between the first and second electrodes.    
     
     
         2 . The apparatus according to  claim 1 , further comprising another shower head which is arranged between the second electrode and the substrate to form a chemical solution flow in a shower form toward the substrate.  
     
     
         3 . The apparatus according to  claim 1 , wherein said shower head has a member having a plurality of openings, and the chemical solution in the shower form is injected or discharged through the plurality of openings.  
     
     
         4 . The apparatus according to  claim 3 , wherein a surface of the member, which has the plurality of openings, is arranged substantially parallel to the substrate.  
     
     
         5 . The apparatus according to  claim 1 , further comprising a circulation mechanism which recovers the chemical solution injected or discharged from said shower head and supplies the chemical solution again to said shower head.  
     
     
         6 . A processing method of arranging a substrate between a first electrode and a second electrode and supplying a current between the first and second electrodes through a chemical solution and the substrate to process the substrate, comprising a step of: 
 arranging a shower head at least at one of a position between the first electrode and the substrate and a position between the second electrode and the substrate, causing the shower head to form a chemical solution flow in a shower form toward the substrate, and causing the chemical solution flow in the shower form to form part of a current path between the first and second electrodes.    
     
     
         7 . An anodizing method of arranging a substrate between a first electrode and a second electrode and supplying a current between the first and second electrodes through a chemical solution and the substrate to anodize the substrate, comprising a step of: 
 arranging a shower head at least at one of a position between the first electrode and the substrate  47 - and a position between the second electrode and the substrate, causing the shower head to form a chemical solution flow in a shower form toward the substrate, and causing the chemical solution flow in the shower form to form part of a current path between the first and second electrodes.    
     
     
         8 . A processing apparatus which has a first electrode arranged above a substrate to oppose the substrate and a second electrode arranged under the substrate to oppose the substrate and executes a chemical process for the substrate, comprising: 
 a chemical solution container which fills a space between the substrate and the second electrode with a chemical solution; and    a mechanism which forms a flow of the chemical solution near a lower surface of the substrate,    wherein said mechanism has a function of causing the chemical solution to overflow from said chemical solution container.    
     
     
         9 . The apparatus according to  claim 8 , wherein said chemical solution container is configured to bring the chemical solution into contact with the lower surface of the substrate.  
     
     
         10 . The apparatus according to  claim 8 , wherein said chemical solution container has a plate which has one or a plurality of openings and opposes the substrate, and the chemical solution flows toward the substrate through the openings of the plate.  
     
     
         11 . The apparatus according to  claim 10 , wherein the plate is arranged at an upper portion of said chemical solution container.  
     
     
         12 . The apparatus according to  claim 8 , wherein the second electrode has one or a plurality of openings, and the chemical solution flows toward the substrate through the openings of the second electrode.  
     
     
         13 . The apparatus according to  claim 12 , wherein the second electrode having the openings is arranged at an upper portion of said chemical solution container.  
     
     
         14 . The apparatus according to  claim 8 , further comprising a holding portion which supports an outer peripheral wall portion of the substrate.  
     
     
         15 . The apparatus according to  claim 8 , wherein a diameter of a cross-section of said chemical solution container near the substrate is substantially the same as that of the substrate.  
     
     
         16 . The apparatus according to  claim 8 , wherein said chemical solution container has an overflow container to be filled with the chemical solution on an outer side thereof.  
     
     
         17 . A semiconductor substrate manufacturing method comprising steps of: 
 anodizing a first substrate in accordance with an anodizing method of  claim 7  to form a porous layer;    forming a non-porous layer on the porous layer;    bonding the first substrate having the non-porous layer to a second substrate via an insulating layer to prepare a bonded substrate stack; and    processing or fabricating the bonded substrate stack to obtain a state in which the porous layer at least partially remains on the second substrate.    
     
     
         18 . A semiconductor substrate manufacturing method comprising steps of: 
 anodizing a first substrate by using a processing apparatus of  claim 8  to form a porous layer;    forming a non-porous layer on the porous layer;    bonding the first substrate having the non-porous layer to a second substrate via an insulating layer to prepare a bonded substrate stack; and    processing or fabricating the bonded substrate stack to obtain a state in which the porous layer at least partially remains on the second substrate.