Process for optimizing junctions formed by solid phase epitaxy

Abstract

A method of forming a semiconductor device includes forming at least one amorphous region within an at least partially formed semiconductor device. The method also includes implanting a halogen species in the amorphous region of the at least partially formed semiconductor device. The method further includes doping at least a portion of the at least one amorphous region to form at least one junction within the at least partially formed semiconductor device. The method also includes performing solid phase epitaxial re-growth to activate the doped portion of the at least one amorphous region of the at least partially formed semiconductor device.

What is claimed is:  
     
         1 . A method of forming a semiconductor device, comprising: 
 forming at least one amorphous region within an at least partially formed semiconductor device;    implanting a halogen species in the at least one amorphous region of the at least partially formed semiconductor device;    doping at least a portion of the at least one amorphous region to form at least one junction within the at least partially formed semiconductor device; and    activating the doped portion of the at least one amorphous region of the at least partially formed semiconductor device by solid phase epitaxial re-growth.    
     
     
         2 . The method of  claim 1 , wherein forming the amorphous region comprises implanting a species selected from the group consisting of silicon and germanium.  
     
     
         3 . The method of  claim 1 , wherein the halogen species comprises a species selected from the group consisting of fluorine and chlorine.  
     
     
         4 . The method of  claim 1 , wherein the halogen species is implanted after forming the amorphous region.  
     
     
         5 . The method of  claim 1 , wherein the halogen species is implanted substantially simultaneously with forming the at least one amorphous region.  
     
     
         6 . The method of  claim 1 , wherein the at least one junction comprises a region selected from the group consisting of a drain region, a source region, and an extension region.  
     
     
         7 . The method of  claim 1 , wherein the at least one junction is doped with a dopant selected from the group consisting of boron, phosphorous, and arsenic.  
     
     
         8 . The method of  claim 1 , wherein an amorphous depth (X α ) associated with the at least one amorphous region is greater than or equal to a junction depth (X j ) associated with the at least one junction.  
     
     
         9 . The method of  claim 1 , wherein an amorphous depth (X α ) associated with the at least one amorphous region is less than or equal to a junction depth (X j ) associated with the at least one junction.  
     
     
         10 . A method of forming a semiconductor device, comprising: 
 implanting at least a halogen species within an at least partially formed semiconductor device to form at least one amorphous region;    doping at least a portion of the at least one amorphous region to form at least one junction within the at least partially formed semiconductor device; and    activating the doped portion of the at least one amorphous region of the at least partially formed semiconductor device by solid phase epitaxial re-growth.    
     
     
         11 . The method of  claim 10 , wherein the at least one amorphous region is implanted with the at least a halogen species and at least a germanium species.  
     
     
         12 . The method of  claim 10 , wherein the at least a halogen species comprises fluorine.  
     
     
         13 . The method of  claim 10 , wherein the at least one junction is doped with at least a boron dopant.  
     
     
         14 . The method of  claim 10 , wherein an amorphous depth (X α ) associated with the at least one amorphous region is greater than or equal to a junction depth (X j ) associated with the at least one junction.  
     
     
         15 . The method of  claim 10 , wherein an amorphous depth (X α ) associated with the at least one amorphous region is less than or equal to a junction depth (X j ) associated with the at least one junction.  
     
     
         16 . A transistor formed using a method, comprising: 
 implanting at least a halogen species within an at least partially formed semiconductor device to form at least one amorphous region;    doping at least a portion of the at least one amorphous region to form at least one junction within the at least partially formed semiconductor device; and    activating the doped portion of the at least one amorphous region of the at least partially formed semiconductor device by solid phase epitaxial re-growth.    
     
     
         17 . The transistor of  claim 16 , wherein the at least a halogen species comprises fluorine.  
     
     
         18 . The transistor of  claim 16 , wherein the at least one junction is doped with at least a boron dopant.  
     
     
         19 . The transistor of  claim 16 , wherein an amorphous depth (X α ) associated with the at least one amorphous region is greater than or equal to a junction depth (X j ) associated with the at least one junction.  
     
     
         20 . The transistor of  claim 16 , wherein an amorphous depth (X α ) associated with the at least one amorphous region is less than or equal to a junction depth (X j ) associated with the at least one junction.