US2004105054A1PendingUtilityA1

Electro-optical device and electronic apparatus

Assignee: SEIKO EPSON CORPPriority: Sep 27, 2002Filed: Sep 9, 2003Published: Jun 3, 2004
Est. expirySep 27, 2022(expired)· nominal 20-yr term from priority
G02F 1/133555G02F 1/136227G02F 1/136209G02F 1/133553G02F 1/1335
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Claims

Abstract

The invention provides an active matrix type electro-optical device and an electronic apparatus using the same capable of preventing interference of light due to contact holes and interference of reflecting light from light-reflecting film. In a thin film transistor (TFT) array substrate of a reflective active matrix type electro-optical device, a light-reflecting film can be formed in a contact hole, but positions of the contact holes for electrically connecting a pixel electrode to a drain electrode, and irregular pattern for scattering light formed on the surface of the reflection film by a lower side irregularity-formation film are different in each of pixels formed in a matrix.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . An active matrix type electro-optical device, comprising: 
 a plurality of pixels arranged in a matrix on a substrate holding an electro-optical material; and    each pixel including a thin film transistor that switches pixels, an irregularity forming film on which a plurality of irregularities including protrusions or holes are dispersed, and a light-reflecting film formed on the irregularity forming film,    the light-reflecting film having on its surface an irregular pattern that scatters light due to the irregularity forming film, and the light-reflecting film being formed in contact holes which are formed in an interlayer insulating film,    wherein, when the pixels are grouped into a plurality of units of n×m pixels, a pattern of contact hole formation-position are different in each of the units.    
     
     
         2 . The active matrix type electro-optical device according to  claim 1 , the contact-hole formation positions being different for each pixel in the units.  
     
     
         3 . The active matrix type electro-optical device according to  claim 1 , the contact-hole formation positions of the pixels located in same positions in the units all being different for each unit.  
     
     
         4 . An active matrix type electro-optical device, comprising: 
 a plurality of pixels arranged in a matrix on a substrate holding an electro-optical material; and    each pixel including a thin film transistor that switches pixels, an irregularity forming film on which a plurality of irregularities including protrusions or holes are dispersed, and a light-reflecting film formed on the irregularity forming film,    the light-reflecting film having on its surface an irregular pattern that scatters light due to the irregularity forming film, and the light-reflecting film being formed in contact holes which are formed in an interlayer insulating film,    wherein, when the plurality of pixels are grouped into a plurality of units of n×m pixels, contact-hole formation positions are different for each unit.    
     
     
         5 . The active matrix type electro-optical device according to  claim 1 , the pixels having different patterns at least in the units, and the irregular pattern positions being different for each unit.  
     
     
         6 . An active matrix type electro-optical device, comprising: 
 a plurality of pixels arranged in a matrix on a substrate holding an electro-optical material; and    each pixel including a thin film transistor that switches pixels, an irregularity forming film on which a plurality of irregularities including protrusions or holes are dispersed, and a light-reflecting film formed on the irregularity forming film,    the light-reflecting film having on its surface an irregular pattern that scatters light due to the irregularity forming film, and the light-reflecting film being formed in contact holes which are formed in an interlayer insulating film,    contact-hole formation positions being different for each pixel.    
     
     
         7 . The active matrix type electro-optical device according to  claim 6 , the pixels having different patterns.  
     
     
         8 . The active matrix type electro-optical device according to  claim 1 , a drain electrode being formed almost over an entire pixel at a lower side of the light-reflecting film in all of the pixels.  
     
     
         9 . The active matrix type electro-optical device according to  claim 1 , the contact holes formed in each pixel having a same area.  
     
     
         10 . The active matrix type electro-optical device according to  claim 1 , liquid crystal being held as electro-optical material between the substrate, which is a first substrate, and a second substrate facing the first substrate.  
     
     
         11 . An electronic apparatus comprising the active matrix type electro-optical device according to  claim 1  as a display unit.  
     
     
         12 . The active matrix type electro-optical device according to  claim 4 , the pixels having different patterns at least in the units, and the irregular pattern positions being different for each unit.  
     
     
         13 . The active matrix type electro-optical device according to  claim 4 , a drain electrode being formed almost over an entire pixel at a lower side of the light-reflecting film in all of the pixels.  
     
     
         14 . The active matrix type electro-optical device according to  claim 6 , a drain electrode being formed almost over an entire pixel at a lower side of the light-reflecting film in all of the pixels.  
     
     
         15 . An electronic apparatus comprising the active matrix type electro-optical device according to  claim 4  as a display unit.  
     
     
         16 . An electronic apparatus comprising the active matrix type electro-optical device according to  claim 6  as a display unit.

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