Methods of fabricating integrated circuitry

Abstract

A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.

1 . A method of fabricating integrated circuitry comprising: 
 providing a substrate comprising a plurality of integrated circuitry die, individual of the die having bond pads;    forming a passivation layer comprising a silicone material over the bond pads;    forming openings through the silicone material to the bond pads; and    after forming the openings, singulating the die from the substrate.    
     
     
         2 . The method of  claim 1  comprising forming the passivation layer comprising silicone material to have a Young's modulus of no greater than 9.0 GPa.  
     
     
         3 . The method of  claim 1  wherein the forming of openings comprises photolithography and etch utilizing photoresist that is completely removed from the substrate prior to the singulating.  
     
     
         4 . The method of  claim 1  wherein the forming of openings comprises photolithography and etch utilizing a photosensitive substance that comprises a part of the singulated die.  
     
     
         5 . The method of  claim 1  wherein the passivation layer comprising silicone material is not formed in contact with the bond pads.  
     
     
         6 . The method of  claim 1  comprising after the singulating, contacting the passivation layer comprising silicone material with a solid particle containing resin.  
     
     
         7 . The method of  claim 1  comprising forming the passivation layer comprising silicone material over a passivation layer comprising polyimide.  
     
     
         8 . The method of  claim 1  comprising forming the passivation layer comprising silicone material on a passivation layer consisting essentially of polyimide.  
     
     
         9 . The method of  claim 1  comprising forming the passivation layer comprising silicone material over a passivation layer comprising silicon nitride.  
     
     
         10 . The method of  claim 1  comprising forming the passivation layer comprising silicone material on a passivation layer consisting essentially of silicon nitride.  
     
     
         11 . The method of  claim 1  wherein the die as singulated from the substrate comprise an outermost layer predominately comprising the passivation layer comprising silicone material.  
     
     
         12 . The method of  claim 1  comprising forming the passivation layer comprising silicone material over another passivation layer, and forming openings to the bond pads through the another passivation layer prior to forming the passivation layer comprising silicone material.  
     
     
         13 . The method of  claim 1  comprising forming a silicon dioxide comprising passivation layer over the bond pads; 
 forming a silicon nitride comprising passivation layer over the silicon dioxide comprising passivation layer;  
 forming openings through the passivation layer comprising silicon nitride and through the passivation layer comprising silicon dioxide to the bond pads;  
 forming a passivation layer comprising polyimide over the passivation layer comprising silicon nitride and to within the openings formed through the passivation layer comprising silicon nitride and the passivation layer comprising silicon dioxide;  
 the passivation layer comprising silicone material being formed over the passivation layer comprising polyimide; and  
 the openings through the silicone material to the bond pads also being formed through the passivation layer comprising polyimide.  
 
     
     
         14 . A method of fabricating integrated circuitry comprising: 
 providing a substrate comprising a plurality of integrated circuitry die, individual of the die having bond pads;    forming a passivation layer comprising a photoimageable silicone material over the plurality of die;    photopatterning the passivation layer comprising a photoimageable silicone material with actinic energy effective to change solubility in a solvent of selected regions of the passivation layer which are received over the bond pads;    exposing the photopatterned passivation layer to the solvent effective to remove the selected regions from over the bond pads; and    after the exposing, singulating the die from the substrate.    
     
     
         15 . The method of  claim 14  wherein the photopatterning is void of any photoresist layer received over the passivation layer comprising photoimageable silicone material.  
     
     
         16 . The method of  claim 14  comprising: 
 providing at least one additional passivation layer intermediate the passivation layer comprising photoimageable silicone; and  
 after the exposing and before the singulating, etching the at least one additional passivation layer through the removed selected regions using the passivation layer comprising photoimageable silicone material as a mask and effective to expose the bond pads.  
 
     
     
         17 . The method of  claim 16  wherein the photopatterning is void of any photoresist layer received over the passivation layer comprising photoimageable silicone material, and the etching is void of any photoresist layer received over the passivation layer comprising photoimageable silicone material.  
     
     
         18 . The method of  claim 14  comprising after the singulating, contacting the passivation layer comprising silicone material with a solid particle containing resin.  
     
     
         19 . The method of  claim 14  comprising forming the passivation layer comprising silicone material to have a Young's modulus of no greater than 9.0 GPa.  
     
     
         20 . The method of  claim 14  wherein the passivation layer comprising silicone material is not formed in contact with the bond pads.  
     
     
         21 . The method of  claim 14  comprising forming the passivation layer comprising silicone material over a passivation layer comprising polyimide.  
     
     
         22 . The method of  claim 14  comprising forming the passivation layer comprising silicone material on a passivation layer consisting essentially of polyimide.  
     
     
         23 . The method of  claim 14  comprising forming the passivation layer comprising silicone material over a passivation layer comprising silicon nitride.  
     
     
         24 . The method of  claim 14  comprising forming the passivation layer comprising silicone material on a passivation layer consisting essentially of silicon nitride.  
     
     
         25 . The method of  claim 14  wherein the die as singulated from the substrate comprise an outermost layer predominately comprising the passivation layer comprising silicone material.  
     
     
         26 . The method of  claim 14  comprising forming the passivation layer comprising silicone material over another passivation layer, and forming openings to the bond pads through the another passivation layer prior to forming the passivation layer comprising silicone material.  
     
     
         27 . The method of  claim 14  comprising forming a silicon dioxide comprising passivation layer over the bond pads; 
 forming a silicon nitride comprising passivation layer over the silicon dioxide comprising passivation layer;  
 forming openings through the passivation layer comprising silicon nitride and through the passivation layer comprising silicon dioxide to the bond pads;  
 forming a passivation layer comprising polyimide over the passivation layer comprising silicon nitride and to within the openings formed through the passivation layer comprising silicon nitride and the passivation layer comprising silicon dioxide;  
 the passivation layer comprising silicone material being formed over the passivation layer comprising polyimide; and  
 the openings through the silicone material to the bond pads also being formed through the passivation layer comprising polyimide.  
 
     
     
         28 . A method of fabricating integrated circuitry comprising: 
 providing a substrate comprising a plurality of integrated circuitry die, individual of the die having bond pads;    forming a first blanket passivation layer over the substrate in contact with the bond pads;    forming a different second blanket passivation layer comprising a silicone material over the first passivation layer;    forming openings through the first and second passivation layers to the bond pads; and    after forming the openings, singulating the die from the substrate.    
     
     
         29 . The method of  claim 28  wherein the first passivation layer consists essentially of silicon dioxide.  
     
     
         30 . The method of  claim 28  wherein the second passivation layer is formed on the first passivation layer.  
     
     
         31 . The method of  claim 28  wherein at least one different additional passivation layer is formed over the first passivation layer prior to forming the different second passivation layer, and such that the different second passivation layer is not formed on the first passivation layer.  
     
     
         32 . The method of  claim 28  wherein at least two different additional passivation layers are formed over the first passivation layer prior to forming the different second passivation layer, and such that the different second passivation layer is not formed on the first passivation layer.  
     
     
         33 . The method of  claim 28  wherein the different second passivation layer is of a photoimageable composition, and the openings are formed by photolithography and etch which are void of any photoresist layer received over the passivation layer comprising photoimageable silicone material.  
     
     
         34 . The method of  claim 28  comprising forming the second passivation layer comprising silicone material to have a Young's modulus of no greater than 9.0 GPa.  
     
     
         35 . The method of  claim 28  comprising after the singulating, contacting the second passivation layer comprising silicone material with a solid particle containing resin.  
     
     
         36 . The method of  claim 28  wherein the die as singulated from the substrate comprise an outermost layer predominately comprising the second passivation layer comprising silicone material.  
     
     
         37 . The method of  claim 28  comprising forming the first passivation layer over another passivation layer, and forming openings to the bond pads through the another passivation layer prior to forming the first passivation layer.