Wiring structure in a semiconductor device

Abstract

A wiring structure includes a first wiring having a first wiring width, and a second wiring formed in the same layer as a layer in which the first wiring is formed, and having a second wiring width greater than the first wiring width. The second wiring is electrically connected to the first wiring. Both of the first and second wirings are composed of copper or an alloy predominantly containing copper therein. The first and second wirings have the same thickness as each other. A ratio of an area of the second wiring to an area of the first wiring is N:1 where N is equal to or greater than 2,000 and equal to or smaller than 200,000,000 (2,000≦N≦200,000,000).

What is claimed is:  
     
         1 . A wiring structure comprising: 
 (a) a first wiring having a first wiring width; and    (b) a second wiring formed in the same layer as a layer in which said first wiring is formed, and having a second wiring width greater than said first wiring width, said second wiring being electrically connected to said first wiring,    wherein both of said first and second wirings are composed of copper or an alloy predominantly containing copper therein,    said first and second wirings have the same thickness as each other, and    a ratio of an area of said second wiring to an area of said first wiring is N:1 where N is equal to or greater than 2,000 and equal to or smaller than 200,000,000 (2,000≦N≦200,000,000).    
     
     
         2 . The wiring structure as set forth in  claim 1 , wherein said ratio N is equal to or greater than 2,000 and equal to or smaller than 2,000,000 (2,000≦N≦2,000,000).  
     
     
         3 . The wiring structure as set forth in  claim 1 , wherein each of said first and second wirings has a thickness equal to or greater than 150 nm and equal to or smaller than 650 nm.  
     
     
         4 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is equal to or smaller than 0.28 micrometers.  
     
     
         5 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is equal to or smaller than 0.20 micrometers.  
     
     
         6 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is equal to or smaller than 0.14 micrometers.  
     
     
         7 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is equal to or smaller than 98 nanometers.  
     
     
         8 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is in the range of 0.28±0.04 micrometers.  
     
     
         9 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is in the range of 0.20±0.04 micrometers.  
     
     
         10 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is in the range of 0.14±0.04 micrometers.  
     
     
         11 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is in the range of 98 nanometers ±0.04 micrometers.  
     
     
         12 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is equal to or greater than 0.28 micrometers, if said second wiring width is equal to or greater than 1.12 micrometers and said first wiring has a length equal to or smaller than 0.56 micrometers.  
     
     
         13 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is equal to 0.14 micrometers, and said first wiring has a length equal to or greater than about 0.40 micrometers.  
     
     
         14 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is equal to 0.20 micrometers, and said first wiring has a length equal to or greater than about 0.20 micrometers.  
     
     
         15 . The wiring structure as set forth in  claim 1 , wherein said first wiring width is equal to 0.28 micrometers, and said first wiring has a length equal to or greater than about 0.19 micrometers.  
     
     
         16 . The wiring structure as set forth in  claim 1 , wherein said first and second wirings are annealed at a temperature of 150 degrees centigrade or higher, if said first and second wirings are composed of copper.  
     
     
         17 . The wiring structure as set forth in  claim 1 , wherein if said first and second wirings are composed of an alloy predominantly containing copper therein, said first and second wirings are annealed at a temperature higher than a temperature at which said first and second wirings are annealed if said first and second wirings are composed of copper.  
     
     
         18 . The wiring structure as set forth in  claim 1 , wherein said wiring structure has a dual-damascene structure.  
     
     
         19 . A semiconductor device including a wiring structure comprising: 
 (a) a first wiring having a first wiring width; and    (b) a second wiring formed in the same layer as a layer in which said first wiring is formed, and having a second wiring width greater than said first wiring width, said second wiring being electrically connected to said first wiring,    wherein both of said first and second wirings are composed of copper or an alloy predominantly containing copper therein,    said first and second wirings have the same thickness as each other, and    a ratio of an area of said second wiring to an area of said first wiring is N:1 where N is equal to or greater than 2,000 and equal to or smaller than 200,000,000 (2,000≦N≦200,000,000)