Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate

Abstract

The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.

What is claimed is:  
     
         1 . A method of manufacturing a semiconductor device, comprising: 
 forming a hydrogen-terminated surface on a silicon substrate; and    forming an insulating layer over said silicon substrate, including: 
 exposing said substantially hydrogen-terminated surface in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal to form a seed layer; and  
 depositing a dielectric material on said seed layer to form said insulating layer.  
   
     
     
         2 . The method as recited in  claim 1 , wherein said seed layer precursor is selected from the group consisting of: 
 Al(CH 3 ) 3 ;    Al (OH) 2  (CH 3 );    Hf(CH 3 ) 4 ;    Hf(OH) 3 (CH 3 );    Zr(CH 3 ) 4 ;    Y(CH 3 ) 3      La(CH 3 ) 3 ; and    combinations thereof.    
     
     
         3 . The method as recited in  claim 1 , wherein said seed layer precursor is Al(CH 3 ) 3 .  
     
     
         4 . The method as recited in  claim 1 , wherein said seed layer is formed by chemical vapor deposition.  
     
     
         5 . The method as recited in  claim 4 , wherein said seed layer is formed by atomic layer deposition.  
     
     
         6 . The method as recited in  claim 1 , wherein exposure to said seed layer precursor is greater than about 5×10 4  Langmuirs.  
     
     
         7 . The method as recited in  claim 1 , wherein exposure to said seed layer precursor is between about 1×10 6  Langmuirs and 6×10 7  Langmuirs.  
     
     
         8 . The method as recited in  claim 1 , wherein said seed layer has a thickness of about two Angstroms or less.  
     
     
         9 . The method as recited in  claim 1 , wherein said seed layer has a thickness between about one-third and about one monolayer.  
     
     
         10 . The method as recited in  claim 1 , wherein forming said seed layer precursor occurs at between about 400° C. and about 20° C.  
     
     
         11 . The method as recited in  claim 1 , wherein forming said seed layer precursor occurs at between about 400° C. and about 250° C.  
     
     
         12 . The method as recited in  claim 1 , wherein said seed layer forms a template for a gate dielectric.  
     
     
         13 . The method as recited in  claim 1 , wherein said gate dielectric comprises said dielectric material on said seed layer.  
     
     
         14 . An active semiconductor device, comprising: 
 semiconductor substrate;    an insulating layer on said semiconductor substrate, said insulating layer comprising: 
 a seed layer comprising substantially a monolayer of a metal oxide having a thickness of up to about two Angstroms and wherein a metal of said metal oxide is attached to said semiconductor substrate; and  
 a dielectric material on said seed layer;  
   a gate electrode located over said insulating layer; and    a doped region located in said semiconductor substrate.    
     
     
         15 . The active device as recited in  claim 12 , wherein said seed layer precursor is selected from the group consisting of: 
 Al (CH 3 ) 3 ;    Al (OH) 2  (CH 3 );    Hf (CH 3 ) 4 ;    Hf (OH) 3  (CH 3 );    Zr(CH 3 ) 4 ;    Y(CH 3 ) 3      La(CH 3 ) 3 ; and    combinations thereof.    
     
     
         16 . The active device as recited in  claim 12 , wherein said seed layer precursor is Al(CH 3 ) 3 .  
     
     
         17 . The active device as recited in  claim 12 , wherein said seed layer has a thickness between about one-third and about one monolayer.  
     
     
         18 . The active device as recited in  claim 12 , wherein said seed layer is a monolayer of aluminum oxide.  
     
     
         19 . The active device as recited in  claim 12 , wherein said dielectric material is selected from the group of high K dielectric materials consisting of: 
 aluminum oxide;    zirconium oxides; and    hafnium oxide.