Drying process for low-k dielectric films

Abstract

A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.

1 . A drying process for removing contaminants from a substrate having a low k dielectric layer thereon in a process chamber, the process comprising: exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.  
     
     
         2 . The drying process of  claim 1 , wherein the photons are generated by ultraviolet light radiation or x ray radiation.  
     
     
         3 . The drying process of  claim 1 , wherein the low k dielectric layer comprises a porous or non-porous doped oxide material, and wherein the heat process comprises heating the substrate to a temperature of about 20° C. to about 400° C.  
     
     
         4 . The drying process of  claim 1 , wherein the low k dielectric layer comprises a porous or non-porous doped oxide material, and wherein the heat process comprises heating the substrate to a temperature of about 100° C. to about 300° C.  
     
     
         5 . The drying process of  claim 1 , wherein the low k dielectric layer comprises an organic material, and wherein the heat process comprises heating the substrate to a temperature of about 80° C. to about 180° C.  
     
     
         6 . The drying process of  claim 1 , wherein the photons incident to the substrate have an energy density of about 10 milliwatts per square centimeter to about 1 watt per square centimeter.  
     
     
         7 . The drying process of  claim 1 , wherein the vacuum process comprises decreasing a pressure about the substrate to about 1 to about 10 millitorr.  
     
     
         8 . The drying process of  claim 1 , further comprising purging the process chamber with an inert gas.  
     
     
         9 . A process for removing contaminants adsorbed, adhered, or trapped within a low k dielectric layer, wherein the contaminants comprise residual water, moisture, silanols, residual plasma or wet etch chemistries residuals of wet clean chemistries, acids, bases, and solvents, the process comprising: exposing the low k dielectric layer in a process chamber to radiation comprising a wavelength of about 150 nanometers to about 500 nanometers; and exposing the substrate to an oxygen free plasma or heat or a vacuum or a combination thereof to remove the contaminants without causing degradation of the low k dielectric layer.  
     
     
         10 . The process of  claim 9 , wherein the low k dielectric layer comprises a porous material or doped oxide material, and wherein heating the substrate comprises a temperature of about 20° C. to about 400° C.  
     
     
         11 . The process of  claim 9 , wherein the low k dielectric layer comprises a porous material or doped oxide material, and wherein heating the substrate comprises a temperature of about 100° C. to about 300° C.  
     
     
         12 . The process of  claim 9 , wherein the low k dielectric layer comprises an organic material, and wherein heating the substrate comprises a temperature of about 80° C. to about 180° C.  
     
     
         13 . The process of  claim 9 , wherein reducing the pressure comprises lowering the pressure in the process chamber to less than about 1 to about 10 milliTorr.  
     
     
         14 . The process of  claim 9 , wherein exposing the low k dielectric layer to the radiation comprises a time of less than about 120 seconds.  
     
     
         15 . The process of  claim 9 , wherein exposing the low k dielectric layer to the radiation comprises a time of less than about 60 seconds.  
     
     
         16 . The process of  claim 9 , wherein the plasma is formed from a gas composition comprising a hydrogen bearing gas and an inert gas.  
     
     
         17 . A drying process for removing contaminants from a substrate having a low k dielectric layer thereon in a process chamber, the process comprising: exposing the low k dielectric layer to electromagnetic radiation; and simultaneously with, prior to, or subsequent to the radiation exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.