Processes for producing a sputtering target from a silicon-based alloy, a sputtering target

Abstract

A process for producing a sputtering target from a silicon-based alloy with an aluminum content of 5-50 wt. %. The target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.

What is claimed is:  
     
         1 . A process for producing a sputtering target from a silicon-based alloy with an Al content of 5-50 wt. %, comprising the steps of: 
 melting the alloy; and    vacuum-casting the alloy in a hollow cylindrical casting mold to produce tubular sections.    
     
     
         2 . A process in accordance with  claim 1 , including casting the alloy in a thin-walled casting mold.  
     
     
         3 . A process in accordance with  claim 1 , further including the step of soldering or cementing the tubular sections on a support tube.  
     
     
         4 . A process in accordance with  claim 3 , further including the step of machining the tubular sections, the tubular sections being soldered or cemented on the support tube after machining.  
     
     
         5 . A process in accordance with  claim 1 , wherein the tubular sections are cast by top-casting.  
     
     
         6 . A sputtering target produced by melting a silicon-based alloy with an Al content of 5-50 wt. %,; and 
 vacuum-casting the alloy in a hollow cylindrical casting mold to produce tubular sections.    
     
     
         7 . A tubular cathode comprising a sputtering target produced by melting a silicon-based alloy with an Al content of 5-50 wt. %; and 
 vacuum-casting the alloy in a hollow cylindrical casting mold.