US2004090162A1PendingUtilityA1
Field emission device
Priority: Dec 28, 2001Filed: Oct 30, 2003Published: May 13, 2004
Est. expiryDec 28, 2021(expired)· nominal 20-yr term from priority
B82Y 40/00H01J 2201/30403H01J 9/025H01J 1/30C01B 32/05
43
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Claims
Abstract
The present invention relates to a field emission device including a silicon substrate having an emitter electrode formed in a surface portion thereof, an insulating layer formed on the emitter electrode and having a nano hole to expose the emitter electrode. An emitter is formed on the emitter electrode exposed through the nano hole. A gate electrode is formed on the insulating layer. The present invention can reduce the driving voltage and thus lower the power consumption.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A field emission device, comprising: a silicon substrate having an emitter electrode formed in a surface portion thereof; an insulating layer formed on said emitter electrode and having a nano hole to expose said emitter electrode; an emitter formed on said emitter electrode exposed through said nano hole; and a gate electrode formed on said insulating layer.
2 . The field emission device as claimed in claim 1 , wherein said emitter electrode is formed by an impurity implantation.
3 . The field emission device as claimed in claim 1 , further comprising a catalyst layer formed between said emitter electrode and said emitter.
4 . The field emission device as claimed in claim 3 , wherein said catalyst layer is made of a transition metal.
5 . The field emission device as claimed in claim 1 , wherein said emitter is formed of any one of carbon nanotube, a nano grain film and a metal tip.Join the waitlist — get patent alerts
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