US2004089220A1PendingUtilityA1

Materials for use in optical and optoelectronic applications

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Assignee: SAINT GOBAIN CERAMICSPriority: May 22, 2001Filed: Sep 23, 2003Published: May 13, 2004
Est. expiryMay 22, 2021(expired)· nominal 20-yr term from priority
Inventors:Milan KoktaDennis PeressiniJeffrey A. CookeKevin Goodnight
H01S 3/113H01S 3/1608
36
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Claims

Abstract

A single crystal ceramic material for optical and optoelectronic applications is d, including a single crystal spinel having a general formula aAD·bE 2 D 3 , wherein A is selected from the group consisting of Mg, Ca, Zn, Mn, Ba, Sr, Cd, Fe, and combinations thereof, E is selected from the group consisting Al, In, Cr, Sc, Lu, Fe, and combinations thereof, and D is selected from the group consisting O, S, Se, and combinations thereof. A ratio b:a>1:1 such that the spinel is rich in E 2 D 3 , and the single crystal spinel is formed by a melt process

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A single crystal ceramic material for optical and optoelectronic applications, comprising a single crystal spinel having a general formula aAD·bE 2 D 3 , wherein A is selected from the group consisting of Mg, Ca, Zn, Mn, Ba, Sr, Cd, Fe, and combinations thereof, E is selected from the group consisting Al, In, Cr, Sc, Lu, Fe, and combinations thereof, and D is selected from the group consisting O, S, Se, and combinations thereof, wherein a ratio b:a>1:1 such that the spinel is rich in E 2 D 3 , and the single crystal spinel is formed by a melt process.  
     
     
         2 . The material of  claim 1 , wherein A is Mg, D is O, and E is Al, such that the single crystal spinel has the formula aMgO.bAl 2 O 3 .  
     
     
         3 . The material of  claim 1 , wherein the single crystal spinel is grown from a melt provided in a crucible.  
     
     
         4 . The material of  claim 1 , wherein the material has a lower mechanical stress and strain compared to stoichiometric spinel.  
     
     
         5 . The material of  claim 1 , wherein the material consists essentially of a single phase of said spinel, with substantially no secondary crystalline phases.  
     
     
         6 . The material of  claim 1 , wherein b:a is not less than about 1.2:1.  
     
     
         7 . The material of  claim 1 , wherein b:a is not less than about 1.5:1.  
     
     
         8 . The material of  claim 1 , wherein b:a is not less than about 2.0:1.  
     
     
         9 . The material of  claim 1 , further comprising Co, wherein the ceramic material forms a saturable absorber Q-switch.  
     
     
         10 . The material of  claim 9 , wherein the saturable absorber Q-switch has a formula Mg 1-x Co x Al y O z  where x is greater than 0 and less than about 1, y is greater than 2 and less than about 8, and z is between about 4 and about 13, said single crystal having tetrahedral and octahedral positions, and wherein most of the magnesium and cobalt occupy tetrahedral positions.  
     
     
         11 . A method of forming a monocrystalline spinel material, comprising: 
 forming a melt; and    growing a spinel single crystal from the melt, the single crystal spinel having a general formula aAD·bE 2 D 3 , wherein A is selected from the group consisting of Mg, Ca, Zn, Mn, Ba, Sr, Cd, Fe, and combinations thereof, E is selected from the group consisting Al, In, Cr, Sc, Lu, Fe, and combinations thereof, and D is selected from the group consisting O, S, Se, and combinations thereof, wherein a ratio b:a>1:1 such that the spinel single crystal is rich in E 2 D 3 .    
     
     
         12 . The material of  claim 11 , wherein A is Mg, D is O, and E is Al, such that the single crystal spinel has the formula aMgO.bAl 2 O 3 .  
     
     
         13 . The material of  claim 11 , wherein b:a is not less than about 1.5:1.  
     
     
         14 . The method of  claim 11 , wherein the melt is provided in a crucible.  
     
     
         15 . The method of  claim 11 , wherein the single crystal is grown by contacting a seed crystal with the melt.  
     
     
         16 . The method of  claim 15 , wherein the seed crystal and the melt are rotated with respect to each other during growing.  
     
     
         17 . The method of  claim 16 , wherein rotation is carried out at a rate within a range of about 2 to about 12 rpms.  
     
     
         18 . The method of  claim 15 , wherein the seed crystal is withdrawn from the melt within a range of about 0.04 inches/hour to about 0.1 inches/hour.  
     
     
         19 . The method of  claim 11 , wherein A is Mg, D is O, and E is Al, the spinel single crystal further includes Co, and the spinel single crystal forms a saturable absorber Q-switch.  
     
     
         20 . The method of  claim 19 , wherein a molar ratio of Mg:Co:Al of the spinel is (1-x):x:y, where x is greater than 0 and less than about 1, and y is greater than 2 and less than about 8.  
     
     
         21 . The method of  claim 11 , wherein the melt is heated to a temperature greater than about 2150° C.

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