US2004082271A1PendingUtilityA1
Polishing pad with window
Priority: Jan 25, 1999Filed: Aug 7, 2003Published: Apr 29, 2004
Est. expiryJan 25, 2019(expired)· nominal 20-yr term from priority
B24B 37/042B24B 37/013B24B 37/205B24B 37/22B24B 49/12
38
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Claims
Abstract
Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed. For example, a light beam having a wavelength between about 300 and 500 nm may be directed through a transparent portion of a polishing surface of a polishing pad. The polishing may be for a shallow trench isolation (STI) fabrication process, a spin-on glass fabrication process and a silicon-on-insulator (SOI) fabrication process.
Claims
exact text as granted — not AI-modified1 . A method of polishing a substrate, comprising:
bringing a polishing surface having a transparent portion into contact with a substrate; causing relative motion between the polishing surface and the substrate; directing a light beam having a wavelength between about 300 and 500 nm through the transparent portion of the polishing surface; and detecting reflections of the light beam from the substrate to determine a polishing endpoint.
2 . The method of claim 1 , wherein the light beam consists essentially of blue light.
3 . The method of claim 2 , wherein the light beam consists essentially of blue(indigo) light.
4 . The method of claim 1 , wherein the light beam has a wavelength of about 400 nm.
5 . The method of claim 4 , wherein the wavelength is between 400 and 415 nm.
6 . The method of claim 5 , wherein the wavelength is approximately 405 nm.
7 . The method of claim 1 , wherein the light beam has a wavelength of about 470 nm.
8 . The method of claim 1 , wherein the substrate includes an active area in which an outermost oxide layer has an incoming thickness of about 1000 to 2000 Angstroms.
9 . The method of claim 1 , wherein the polishing process is a step in a shallow trench isolation (STI) fabrication process.
10 . The method of claim 1 , wherein the polishing process is a step in a spin-on glass fabrication process.
11 . The method of claim 1 , wherein the polishing process is a step in a silicon-on-insulator (SOI) fabrication process.
12 . A method of polishing a substrate in a shallow trench isolation (STI) process, comprising:
bringing a polishing surface having a transparent portion into contact with an active area of a substrate, wherein the active area includes an oxide layer disposed on a nitride layer; causing relative motion between the polishing surface and the substrate; directing a light beam having a wavelength consisting essentially of 400 to 415 nm through the transparent portion of the polishing surface; and detecting reflections of the light beam from the substrate to determine a polishing endpoint.
13 . A method of polishing a substrate, comprising:
bringing a polishing surface having a transparent portion into contact with a substrate, the substrate needing polishing in one of a shallow trench isolation (STI) fabrication process, a spin-on glass fabrication process and a silicon-on-insulator (SOI) fabrication process; causing relative motion between the polishing surface and the substrate; directing a light beam having a wavelength between about 300 and 500 nm through the transparent portion of the polishing surface; and detecting reflections of the light beam from the substrate to determine a polishing endpoint.
14 . The method of claim 13 , wherein the polishing process is a step in a shallow trench isolation (STI) fabrication process.
15 . The method of claim 13 , wherein the polishing process is a step in a spin-on glass fabrication process.
16 . The method of claim 13 , wherein the polishing process is a step in a silicon-on-insulator (SOI) fabrication process.Join the waitlist — get patent alerts
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