Process for depositing a tungsten-based and/or molybdenum-based layer on a rigid substrate, and substrate thus coated

Abstract

The present invention is directed to a process for depositing at least one layer ( 3 ) based on tungsten and/or on molybdenum by chemical vapor deposition on a non-conductive substrate ( 1 ), such as glass, ceramic, glass-ceramic, or polymer, which includes providing at least one tungsten- and/or molybdenum-containing precursor in the form of a metal halide and/or of an organometallic compound, and at least one reducing agent, such as hydrogen or silane, to form the at least one metal layer. The present invention also relates to the substrate obtained by the preceding process and its applications, especially for producing a glazing, mirrors, or emissive screens.

What is claimed is:  
     
         1 . A process for depositing at least one metal layer based on tungsten or molybdenum by chemical vapor deposition on a non-conductive substrate, which comprises providing at least one tungsten- or molybdenum-containing precursor in the form of a metal halide or an organometallic compound and at least one reducing agent to form the at least one metal layer.  
     
     
         2 . The process according to  claim 1 , wherein the at least one metal layer is provided on a ribbon of glass on a float line.  
     
     
         3 . The process according to  claim 1 , wherein the at least one metal layer is deposited directly on the substrate.  
     
     
         4 . The process according to  claim 1 , which further comprises depositing a doped metal oxide layer on the substrate before the at least one metal layer is formed.  
     
     
         5 . The process according to  claim 4 , wherein the doped metal oxide layer is electrically conductive, transparent, and is deposited pyrolytically or by chemical vapor deposition.  
     
     
         6 . The process according to  claim 1 , which further comprises at least partially covering the at least one metal layer by depositing thereupon a second metal or metal alloy layer that contains a metal other than tungsten or molybdenum.  
     
     
         7 . The process according to  claim 6 , which further comprises at least partially covering the second metal layer with a metal protective layer containing at least one metal chosen from the group consisting of nickel, chromium, titanium, tantalum, niobium, palladium, and zirconium.  
     
     
         8 . A process for electrolytically depositing a metal or metal alloy layer that contains copper or silver on a non-conductive substrate, which process comprises depositing on the substrate at least one metal layer based on tungsten or molybdenum that is sufficiently electrically conductive to allow subsequent electrolytic deposition of the copper or silver layer.  
     
     
         9 . The process according to  claim 8 , wherein the at least one tungsten or molybdenum layer is deposited by vacuum sputtering or by chemical vapor deposition using at least one tungsten- or molybdenum-containing precursor in the form of a metal halide or an organometallic compound and at least one reducing agent to form the layer.  
     
     
         10 . The process according to  claim 8 , wherein the tungsten or molybdenum layer is etched before the copper or silver layer is electrolytically deposited.  
     
     
         11 . The process according to  claim 8 , wherein each of the tungsten or molybdenum layer and the copper or silver layer are deposited and then etched.  
     
     
         12 . The process according to  claim 8 , wherein the at least one metal layer is a tungsten layer and the etching of the tungsten layer is done with a solution comprising hydrogen peroxide and aqueous ammonia.  
     
     
         13 . An article comprising a substrate and at least one metal layer thereon obtainable by the process of  claim 1 .  
     
     
         14 . The article of  claim 13 , wherein the substrate is a glass, ceramic, glass-ceramic composite, or polymer.  
     
     
         15 . The article of  claim 13 , further comprising a doped metal oxide layer between the substrate and the at least one tungsten or molybdenum layer.  
     
     
         16 . The article of  claim 13 , further comprising a layer of copper or silver at least partially covering the at least one tungsten or molybdenum layer.  
     
     
         17 . The article of  claim 16 , further comprising at least partially covering the copper or silver layer with at least one protective layer containing at least one metal chosen from the group consisting of nickel, chromium, titanium, tantalum, niobium, palladium, and zirconium.  
     
     
         18 . The article of  claim 17 , wherein the thickness of the tungsten or molybdenum layer is between 30 nm and 500 nm.  
     
     
         19 . The article of  claim 17 , wherein the thickness of the doped metal oxide layer is from 50 nm to 500 nm.  
     
     
         20 . The article of  claim 17 , wherein the thickness of the copper or silver layer is between 0.1 μm and 10 μm.  
     
     
         21 . The article of  claim 17 , wherein the thickness of the at least one protective layer is from 10 nm to 300 nm.  
     
     
         22 . The article of  claim 17 , wherein at least one of the layers is etched or deposited in a discontinuous manner.