US2004080028A1PendingUtilityA1

Semiconductor device with semiconductor chip mounted in package

39
Assignee: TOSHIBA KKPriority: Sep 5, 2002Filed: Aug 19, 2003Published: Apr 29, 2004
Est. expirySep 5, 2022(expired)· nominal 20-yr term from priority
Inventors:Satoshi Yanagisawa
H10W 72/5522H10W 74/00H10W 72/871H10W 90/756H10W 72/926H10W 72/951H10W 72/952H10W 72/075H10W 72/07636H10W 72/07637H10W 72/07633H10W 72/07337H10W 72/07336H10W 72/652H10W 72/655H10W 70/481H10W 70/442H10W 70/466H10W 40/778H10W 74/111H10W 72/60
39
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Claims

Abstract

A semiconductor device including a semiconductor chip having first and second principal surfaces is disclosed. The semiconductor chip includes a first electrode formed on the first principal surface and a second electrode formed on the second principal surface. A first lead frame includes a first connecting portion connected to the first electrode and a first terminal portion. A second lead frame includes a second connecting portion connected to the second electrode and a second terminal portion. The semiconductor chip is sealed by a housing. The housing is formed so as not to cover part of surfaces of the first and second connecting portions.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A semiconductor device, comprising: 
 a semiconductor chip including first and second principal surfaces, a first electrode formed on the first principal surface, and a second electrode formed on the second principal surface.    a first lead frame including a first heat sink portion connected to the first electrode and a first terminal portion;    a second lead frame including a second heat sink portion connected to the second electrode and a second terminal portion; and    a housing sealing the semiconductor chip and being formed not to cover part of surfaces of the first and second heat sink portions.    
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first and second terminal portions are unified with the first and second heat sink portions from which the first and second terminal portions extend, respectively.  
     
     
         3 . The semiconductor device according to  claim 1 , wherein the first heat sink portion and the first terminal portion are separate components and are connected to each other to constitute the first lead frame, and the second heat sink portion and the second terminal portion are separate components and are connected to each other to constitute the second lead frame.  
     
     
         4 . The semiconductor device according to  claim 1 , wherein the first and second electrodes are directly connected to the first and second heat sink portions, respectively.  
     
     
         5 . The semiconductor device according to  claim 1 , wherein the first and second heat sink portions are composed of conductive plates.  
     
     
         6 . The semiconductor device according to  claim 1 , wherein thicknesses of the first and second heat sink portions are greater than thicknesses of the first and second terminal portions, respectively.  
     
     
         7 . The semiconductor device according to  claim 1 , wherein the first and the second heat sink portions and the first and second terminal portions are composed of conductive materials containing Cu.  
     
     
         8 . The semiconductor device according to  claim 1 , wherein the first and second heat sink portions are composed of conductive materials containing Al, and the first and second terminal portions are composed of conductive materials containing Cu.  
     
     
         9 . The semiconductor device according to  claim 8 , wherein the first electrode is composed of a conductive material containing Al, and the first heat sink portion is connected to the first electrode by an ultrasonic bonding operation.  
     
     
         10 . The semiconductor device according to  claim 1 , further comprising: 
 a third electrode on the first principal surface, the third electrode being connected to a third lead frame through a wire.    
     
     
         11 . The semiconductor device according to  claim 10 , wherein the first lead frame is formed to extend into a region above the third electrode.  
     
     
         12 . The semiconductor device according to  claim 1 , further comprising: 
 a third electrode on the first principal surface; and    a third lead frame including a top plate portion connected to the third electrode and a third terminal portion.    
     
     
         13 . The semiconductor device according to  claim 12 , wherein the first lead frame is formed to extend into a region above the third electrode.  
     
     
         14 . The semiconductor device according to  claim 12 , wherein the housing is formed to expose part of a surface of the top plate portion.  
     
     
         15 . The semiconductor device according to  claim 12 , wherein the top plate portion and the third terminal portion are composed of a conductive material containing Cu.  
     
     
         16 . The semiconductor device according to  claim 12 , wherein the top plate portion is composed of a conductive material containing Al, and the third terminal portion is composed of a conductive material containing Cu.  
     
     
         17 . The semiconductor device according to  claim 16 , wherein the third electrode is composed of a conductive material containing Al, and the top plate portion is connected to the third electrode by an ultrasonic bonding operation.  
     
     
         18 . A semiconductor device, comprising: 
 a semiconductor chip including first and second principal surfaces, a first electrode formed on the first principal surface, and a second electrode formed on the second principal surface;    a first lead frame including a first connecting portion connected to the first electrode and a first terminal portion, the first connecting portion being conductive and plate-shaped;    a second lead frame including a second connecting portion connected the second electrode and a second terminal portion, the second connecting portion being conductive and plate-shaped; and    a housing sealing the semiconductor chip, and being formed not to cover part of surfaces of the first and second connecting portions.    
     
     
         19 . The semiconductor device according to  claim 18 , wherein the first and second terminal portions are unified with the first and second connecting portions from which the first and second terminal portions extend, respectively.  
     
     
         20 . The semiconductor device according to  claim 18 , wherein the first connecting portion and the first terminal portion are separate components and connected to each other to constitute the first lead frame, and the second connecting portion and the second terminal portion are separate component and connected to each other to constitute the second lead frame.  
     
     
         21 . The semiconductor device according to  claim 18 , wherein the first and second electrodes are directly connected to the first and second connecting portions, respectively.  
     
     
         22 . The semiconductor device according to  claim 18 , wherein thicknesses of the first and second connecting portions are greater than thicknesses of the first and second terminal portions, respectively.  
     
     
         23 . The semiconductor device according to  claim 18 , wherein the first and second connecting portions and the first and second terminal portions are composed of conductive materials containing Cu.  
     
     
         24 . The semiconductor device according to  claim 18 , wherein the first and second connecting portions are composed of conductive materials containing Al, and the first and second terminal portions are composed of conductive materials containing Cu.  
     
     
         25 . The semiconductor device according to  claim 24 , wherein the first electrode is composed of a conductive material containing Al, and the first connecting portion is connected to the first electrode by an ultrasonic bonding operation.  
     
     
         26 . The semiconductor device according to  claim 18 , further comprising: 
 a third electrode on the first principal surface, the third electrode being connected to the third lead frame through a wire.    
     
     
         27 . The semiconductor device according to  claim 26 , wherein the first lead frame is formed to extend into a region above the third electrode.  
     
     
         28 . The semiconductor device according to  claim 18 , further comprising: 
 a third electrode on the first principal surface; and    a third lead frame including a top plate portion connected to the third electrode and a third terminal portion.    
     
     
         29 . The semiconductor device according to  claim 28 , wherein the first lead frame is formed to extend into a region above the third electrode.  
     
     
         30 . The semiconductor device according to  claim 28 , wherein the housing is formed to expose part of a surface of the top plate portion.  
     
     
         31 . The semiconductor device according to  claim 28 , wherein the top plate portion and the third terminal portion are composed of a conductive material containing Cu.  
     
     
         32 . The semiconductor device according to  claim 28 , wherein the top plate portion is composed of a conductive material containing Al, and the third terminal portion is composed of a conductive material containing Cu.  
     
     
         33 . The semiconductor device according to  claim 32 , wherein the third electrode is composed of a conductive material containing Al, and the top plate portion is connected to the third electrode by an ultrasonic bonding operation.

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