Surfactants for chemical mechanical polishing

Abstract

Methods and compositions are disclosed for chemical mechanical polishing (CMP) of semiconductor substrates, post-CMP storage of semiconductor substrates and post-CMP cleaning of semiconductor substrates. The methods and compositions feature the use of surfactants and, in some cases, passivation agents. The methods and compositions are particularly suited to polishing, storing and cleaning semiconductor substrates comprising hydrophobic surfaces.

What is claimed is:  
     
         1 . A method for the chemical-mechanical polishing of a surface material on a semiconductor substrate comprising: 
 a. applying a liquid comprising a surfactant to the surface material; and    b. polishing the surface material to create a newly-exposed surface material.    
     
     
         2 . The method of  claim 1  wherein the surface material comprises copper.  
     
     
         3 . The method of  claim 2  wherein the newly-exposed surface material comprises copper.  
     
     
         4 . The method of  claim 3  further comprising applying a passivation agent to the newly-exposed surface material.  
     
     
         5 . The method of  claim 4  wherein the passivation agent is selected from the group consisting of benzotriazole, hydroquinone, pyrogallol, gallic acid and combinations thereof.  
     
     
         6 . The method of  claim 4  wherein the passivation agent comprises benzotriazole.  
     
     
         7 . The method of  claim 1  wherein the surfactant is an anionic surfactant.  
     
     
         8 . The method of  claim 1  wherein the surfactant is an cationic surfactant.  
     
     
         9 . The method of  claim 1  wherein the surfactant is an nonionic surfactant.  
     
     
         10 . The method of  claim 1  wherein the surfactant is Coppeready® Post Clean Surfactant.  
     
     
         11 . The method of  claim 1  wherein the concentration of surfactant in the liquid is between about 0.01 and about 10 weight percent.  
     
     
         12 . The method of  claim 2  wherein the newly-exposed surface material comprises tantalum.  
     
     
         13 . The method of  claim 1  wherein at least part of the newly-exposed surface material is hydrophobic.  
     
     
         14 . The method of  claim 1  wherein the newly-exposed surface material comprises a low-k dielectric material.  
     
     
         15 . The method of  claim 1  wherein the newly-exposed surface material comprises an organosilica glass.  
     
     
         16 . A method for the chemical-mechanical polishing of a surface material on a semiconductor substrate comprising: 
 a. polishing the surface material;    b. applying a liquid comprising a surfactant to a newly-exposed surface material; and    c. polishing the newly-exposed surface material.    
     
     
         17 . The method of  claim 21  wherein the surface material comprises copper.  
     
     
         18 . The method of  claim 22  wherein the newly-exposed surface material comprises copper.  
     
     
         19 . The method of  claim 23  further comprising applying a passivation agent to the newly-exposed surface material.  
     
     
         20 . The method of  claim 24  wherein the passivation agent is selected from the group consisting of benzotriazole, hydroquinone, pyrogallol, gallic acid and combinations thereof.  
     
     
         21 . The method of  claim 24  wherein the passivation agent comprises benzotriazole.  
     
     
         22 . The method of  claim 16  wherein the surfactant is an anionic surfactant.  
     
     
         23 . The method of  claim 16  wherein the surfactant is an cationic surfactant.  
     
     
         24 . The method of  claim 16  wherein the surfactant is an nonionic surfactant.  
     
     
         25 . The method of  claim 16  wherein the surfactant is Coppeready® Post Clean Surfactant.  
     
     
         26 . The method of  claim 16  wherein the concentration of surfactant in the liquid is between about 0.01 and about 10 weight percent.  
     
     
         27 . The method of  claim 22  wherein the newly-exposed surface material comprises tantalum.  
     
     
         28 . The method of  claim 21  wherein at least part of the newly-exposed surface material is hydrophobic.  
     
     
         29 . The method of  claim 21  wherein the newly-exposed surface material comprises an organosilica glass.