Preparing a wafer for electroplating

Abstract

A wafer is prepared for electroplating via a spin, rinse and dry process performed on the wafer prior to electroplating. The process may be performed in a standalone tool or may be performed in a preclean module integrated into an electroplating tool.

What is claimed is:  
     
         1 . A method comprising: 
 rinsing a wafer with an aqueous solution;    drying the wafer; and    electroplating a metal onto at least a portion of the wafer after rinsing the wafer and drying the wafer.    
     
     
         2 . The method of  claim 1 , wherein electroplating the metal comprises electroplating copper.  
     
     
         3 . The method of  claim 1 , further comprising depositing a metal seed layer onto the portion of the wafer prior to rinsing the wafer.  
     
     
         4 . The method of  claim 1 , wherein rinsing the wafer comprises applying deionized water to the wafer.  
     
     
         5 . The method of  claim 2 , further comprising using the copper for interconnections.  
     
     
         6 . The method of  claim 1 , further comprising preventing comet defects on the wafer by rinsing the wafer and drying the wafer.  
     
     
         7 . The method of  claim 2 , further comprising electroplating the metal within 48 hours after rinsing the wafer and drying the wafer.  
     
     
         8 . The method of  claim 1 , further comprising spinning the wafer while rinsing the wafer and drying the wafer.  
     
     
         9 . A method comprising: 
 placing a wafer in a spin rinse dry module integrated within a tool;    rinsing the wafer with an aqueous solution;    drying the wafer; and    electroplating a metal onto at least a portion of the wafer after rinsing the wafer and drying the wafer.    
     
     
         10 . The method of  claim 9 , further comprising transporting the wafer to an electroplating module integrated within the tool to electroplate the metal.  
     
     
         11 . The method of  claim 9 , further comprising depositing a metal seed layer onto the portion of the wafer prior to rinsing the wafer.  
     
     
         12 . The method of  claim 9 , wherein rinsing the wafer comprises applying deionized water to the wafer.  
     
     
         13 . The method of  claim 12 , further comprising providing the deionized water from a center of the wafer to an edge of the wafer.  
     
     
         14 . The method of  claim 9 , further comprising spinning the wafer while rinsing the wafer and drying the wafer.  
     
     
         15 . The method of  claim 10 , further comprising electroplating the metal within ten minutes after rinsing the wafer and drying the wafer.  
     
     
         16 . An apparatus comprising: 
 a semiconductor tool having at least a first module and a second module integrated therein;    the first module comprising a spin rinse dry module to spin, rinse, and dry a wafer;    the second module comprising an electroplating module to electroplate a metal onto at least a portion of the wafer; and    a transport mechanism to deliver the wafer to the electroplating module from the spin rinse dry module.    
     
     
         17 . The apparatus of  claim 16 , wherein the electroplating module comprises a copper electroplating module.  
     
     
         18 . The apparatus of  claim 16 , wherein the first module comprises an introduction mechanism to provide an aqueous solution to the wafer.  
     
     
         19 . The apparatus of  claim 16 , wherein the first module is stationed adjacent an entry port of the semiconductor tool.