Capacitor of a semiconductor memory device and method of forming the seme

Abstract

A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition; forming an oxidized TiN layer by performing an oxidation process on the dielectric layer; and forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a plasma vapor deposition (PVD).

What is claimed is:  
     
         1 . A capacitor of a semiconductor device, comprising: 
 a lower electrode formed over a semiconductor substrate;    a dielectric layer containing a Ta element formed on the lower electrode; and    an upper electrode formed on the dielectric layer, the upper electrode having an oxidized layer and a titanium containing layer,    wherein the oxidized layer is between the TiN layer and the dielectric layer.    
     
     
         2 . The capacitor of  claim 1 , wherein the lower electrode is formed of Ru, Pt, Ir, Os, W, Mo, Co, Ni, Au, Ag, RuO 2  or IrO 2 .  
     
     
         3 . The capacitor of  claim 1 , wherein the dielectric layer is formed of TaON or Ta 2 O 5 .  
     
     
         4 . The capacitor of  claim 1 , wherein the oxidized layer is TiON.