System and method for monitoring packer conditions

Abstract

A system and method for monitoring a device in a well, according to which a sensor is embedded in the device for sensing a condition of the device, and outputting a signal in response to the condition.

What is claimed is:  
     
         1 . A system for monitoring a device in a well, the system comprising a sensor embedded in the device for sensing a condition of the device and for outputting a signal in response to the condition.  
     
     
         2 . The system of  claim 1  further comprising a transceiver for receiving the signal from the sensor and processing the signal.  
     
     
         3 . The system of  claim 1  wherein the condition is selected from the group consisting of pressure at at least one area in the device, local strain in the device, shear forces in the device, creep in the device, and chemical conditions in the device.  
     
     
         4 . The system of  claim 1  wherein the condition is such that it is measured more effectively from within the device when compared to measurements taken outside the device.  
     
     
         5 . The system of  claim 1  wherein the sensor is fabricated according to an insulated, bulk complementary metal-oxide-silicon process, using high-temperature silicon-on-insulator technologies.  
     
     
         6 . The system of  claim 1  wherein the device is a packer.  
     
     
         7 . The system of  claim 6  wherein the packer comprises an elastomeric packer element, and wherein the sensor is embedded in the elastomeric packer element.  
     
     
         8 . The system of  claim 1  wherein the sensor is fabricated using a silicon-on-sapphire fabrication process.  
     
     
         9 . A method for monitoring a device in a well, the method comprising the steps of: 
 embedding a sensor in the device for sensing a condition of the device; and    outputting a signal from the sensor in response to the condition.    
     
     
         10 . The method of  claim 9  further comprising the step of transmitting the output signal from the sensor to a transceiver for processing.  
     
     
         11 . The method of  claim 9  wherein the condition is selected from the group consisting of pressure at at least one area in the device, local strain in the device, shear forces in the device, creep in the device, and chemical conditions in the device.  
     
     
         12 . The method of  claim 9  wherein the condition is such that it is measured more effectively from within the device when compared to measurements taken outside the device.  
     
     
         13 . The method of  claim 9  wherein the sensor is fabricated according to an insulated, bulk complementary metal-oxide-silicon process, using high-temperature silicon-on-insulator technologies.  
     
     
         14 . The method of  claim 9  wherein the device is a packer.  
     
     
         15 . The method of  claim 14  wherein the packer comprises an elastomeric packer element, and wherein the sensor is embedded in the elastomeric packer element.  
     
     
         16 . The method of  claim 9  wherein the sensor is fabricated using a silicon-on-sapphire fabrication process.