Semiconductor manufacturing apparatus and manufacturing method of thin film semiconductor device

Abstract

In a manufacturing technology for forming a thin film transistor comprising a laser irradiation step, objects of the present invention are to obtain a high performance and multifunction semiconductor manufacturing apparatus and thin film transistor manufacturing method. A silicon thin film 2001 is formed on a glass substrate 202, and laser 203 is irradiated onto this thin film 201 whereby a re-crystallization film is obtained. This re-crystallization film undergoes a hydrogen plasma processing so that dangling-bonds of silicon are terminated. Moreover, a step for forming a silicon dioxide film 205 on the re-crystallization film is included. These steps are performed under the conditions that the glass substrate 202 is not exposed to the air and a processing temperature is 350° C. or less.

What is claimed is:  
     
         1 . A semiconductor manufacturing apparatus comprising: 
 a silicon thin film formation chamber, an insulating thin film formation chamber, a laser irradiation chamber, a hydrogen annealing chamber and transportation means for transporting a substrate having planar dimensions of a substrate width by a substrate length,    wherein each of said chambers and said transportation means are constituted such that said substrate on which a semiconductor device is formed can be transported among said chambers without exposure of said substrate to the air; and    wherein said laser irradiation chamber includes an irradiation system and a vacuum chamber for accommodating the substrate, wherein the vacuum chamber has planar dimensions of a chamber length and a chamber width wherein at least one of the chamber length and chamber width is less than twice a respective length or width dimension of the substrate.    
     
     
         2 . The semiconductor manufacturing apparatus of  claim 1 , wherein said substrate is held in a stationary position during laser irradiation in said laser irradiation chamber.  
     
     
         3 . The semiconductor manufacturing apparatus of  claim 1 , wherein the irradiation system includes a laser and an optical system for shaping the laser beam, wherein a part of said optical system is movably disposed within said vacuum chamber such that the laser beam can be irradiated onto substantially the entire planar area of said substrate.  
     
     
         4 . The semiconductor manufacturing apparatus of  claim 1 , wherein the vacuum chamber includes a window, said window having dimensions corresponding to a planar area of said substrate, wherein a laser from said irradiation system is passed over substantially the entire planar area of said substrate through said window.