US2004050319A1PendingUtilityA1

Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device

30
Assignee: SEMICONDUCTOR TECH ACAD RES CTPriority: Sep 13, 2002Filed: Mar 31, 2003Published: Mar 18, 2004
Est. expirySep 13, 2022(expired)· nominal 20-yr term from priority
Inventors:Mitsumasa KoyanagiJeoung ShimHiroyuki Kurino
H10D 64/0112H10D 30/608H10D 30/0227H10D 30/0275H10D 30/0212
30
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Claims

Abstract

A nickel-silicon compound forming method is disclosed which comprises forming nickel on at least one of only silicon and a compound containing silicon, and performing stepwise-heating of the nickel together with the at least one of only silicon and the compound containing silicon.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A nickel-silicon compound forming method comprising: 
 forming nickel on at least one of only silicon and a compound containing silicon; and    performing stepwise-heating of the nickel together with said at least one of only silicon and the compound containing silicon.    
     
     
         2 . A method according to  claim 1 , wherein 
 the stepwise heating includes: 
 after the nickel is heated from a temperature T 0  to a temperature T 1  together with said at least one of only silicon and the compound containing silicon;  
 repeating a plurality of times a step of increasing, by a temperature ΔT over a period of time S 1 , the temperature T 1  of the nickel and said at least one of only silicon and the compound containing silicon, and keeping a resultant temperature for a period of time S 2 ; and  
 thereby heating the nickel from the temperature T 0  to a temperature T 2  by the temperature ΔT stepwise together with said at least one of only silicon and the compound containing silicon.  
   
     
     
         3 . A method according to  claim 1 , wherein 
 the compound containing silicon includes silicon germanium.    
     
     
         4 . A method according to  claim 2 , wherein 
 in the stepwise heating, the period of time S 1  is shorter than the period of time S 2 .    
     
     
         5 . A method according to  claim 2 , wherein 
 in the stepwise heating, the temperature ΔT is lower than a difference between the temperature T 1  and temperature T 0 .    
     
     
         6 . The method according to  claim 2 , wherein 
 the nickel is heated to the temperature T 2  stepwise together with said at least one of only silicon and the compound containing silicon, and the temperature T 2  is then kept for a period of time substantially equal to that required for the stepwise heating.    
     
     
         7 . The method according to  claim 2 , wherein 
 the nickel is heated to the temperature T 2  stepwise together with said at least one of only silicon and the compound containing silicon, the temperature T 2  is kept for a period of time substantially equal to that required for the stepwise heating, and the nickel is then cooled to the temperature T 0 .    
     
     
         8 . The method according to  claim 2 , wherein 
 in the stepwise heating, the temperature T 1  is not more than 350° C., and the temperature T 2  falls within a range between 450° C. (inclusive) and 900° C. (exclusive).    
     
     
         9 . The method according to  claim 2 , wherein 
 the compound containing silicon includes silicon germanium.    
     
     
         10 . The method according to any one of  claims 1  to  3 , wherein 
 nickel mono silicide is formed on said at least one of only silicon and the compound containing silicon.  
 
     
     
         11 . A semiconductor device manufacturing method comprising: 
 forming a nickel-silicon compound on a semiconductor element comprising at least one of only silicon and a compound containing silicon;    wherein the nickel-silicon compound is formed on the semiconductor element by; 
 forming nickel on said at least one of only silicon and the compound containing silicon; and  
 performing stepwise-heating of the nickel together with said at least one of only silicon and the compound containing silicon.  
   
     
     
         12 . The method according to  claim 11 , wherein 
 the stepwise heating includes: 
 after the nickel is heated from a temperature T 0  to a temperature T 1  together with said at least one of only silicon and the compound containing silicon;  
 repeating a plurality of times a step of increasing, by a temperature ΔT over a period of time S 1 , the temperature T 1  of the nickel and said at least one of only silicon and the compound containing silicon, and keeping a resultant temperature for a period of time S 2 ; and  
 thereby heating the nickel from the temperature T 0  to a temperature T 2  by the temperature ΔT stepwise together with said at least one of only silicon and the compound containing silicon.  
   
     
     
         13 . The method according to  claim 11 , wherein 
 the compound containing silicon includes silicon germanium.    
     
     
         14 . The method according to  claim 12 , wherein 
 in the stepwise heating, the period of time S 1  is shorter than the period of time S 2 .    
     
     
         15 . The method according to  claim 12 , wherein 
 in the stepwise heating, the temperature ΔT is lower than a difference between the temperature T 1  and temperature T 0 .    
     
     
         16 . The method according to  claim 12 , wherein 
 the nickel is heated to the temperature T 2  stepwise together with said at least one of only silicon and the compound containing silicon, and the temperature T 2  is then kept for a period of time substantially equal to that required for the stepwise heating.    
     
     
         17 . The method according to  claim 12 , wherein 
 the nickel is heated to the temperature T 2  stepwise together with said at least one of only silicon and the compound containing silicon, the temperature T 2  is kept for a period of time substantially equal to that required for the stepwise heating, and the nickel is then cooled to the temperature T 0 .    
     
     
         18 . The method according to  claim 12 , wherein 
 in the stepwise heating, the temperature T 1  is not more than 350° C., and the temperature T 2  falls within a range between 450° C. (inclusive) and 900° C. (exclusive).    
     
     
         19 . The method according to  claim 12 , wherein 
 the compound containing silicon includes silicon germanium.    
     
     
         20 . The method according to any one of  claims 11  to  19 , wherein 
 the semiconductor element includes a transistor, and the nickel-silicon compound is formed at least one of a source, drain, and gate of the transistor.  
 
     
     
         21 . The method according to  claim 20 , wherein 
 nickel mono silicide is formed as the nickel-silicon compound.    
     
     
         22 . A semiconductor device comprising: 
 a semiconductor element;    wherein the semiconductor element has a portion formed by at least one of only silicon and a compound containing silicon;    a nickel-silicon compound is formed on the portion; and    the nickel-silicon compound is formed on the portion by; 
 forming nickel on said at least one of only silicon and the compound containing silicon; and  
 performing stepwise-heating of the nickel together with said at least one of only silicon and the compound containing silicon.  
   
     
     
         23 . The device according to  claim 22 , wherein 
 the stepwise heating includes: 
 after the nickel is heated from a temperature T 0  to a temperature T 1  together with said at least one of only silicon and the compound containing silicon;  
 repeating a plurality of times a step of increasing, by a temperature ΔT over a period of time S 1 , the temperature T 1  of the nickel and said at least one of only silicon and the compound containing silicon, and keeping a resultant temperature for a period of time S 2 ; and  
 thereby heating the nickel from the temperature T 0  to a temperature T 2  by the temperature ΔT stepwise together with said at least one of only silicon and the compound containing silicon.  
   
     
     
         24 . The device according to  claim 22 , wherein 
 the compound containing silicon includes silicon germanium.    
     
     
         25 . The device according to  claim 23 , wherein 
 in the stepwise heating, the period of time S 1  is shorter than the period of time S 2 .    
     
     
         26 . The device according to  claim 23 , wherein 
 in the stepwise heating, the temperature ΔT is lower than a difference between the temperature T 1  and temperature T 0 .    
     
     
         27 . The device according to  claim 23 , wherein 
 the nickel is heated to the temperature T 2  stepwise together with said at least one of only silicon and the compound containing silicon, and the temperature T 2  is then kept for a period of time substantially equal to that required for the stepwise heating.    
     
     
         28 . The device according to  claim 23 , wherein 
 the nickel is heated to the temperature T 2  stepwise together with said at least one of only silicon and the compound containing silicon, the temperature T 2  is kept for a period of time substantially equal to that required for the stepwise heating, and the nickel is then cooled to the temperature T 0 .    
     
     
         29 . The device according to  claim 23 , wherein 
 in the stepwise heating, the temperature T 1  is not more than 350° C., and the temperature T 2  falls within a range between 450° C. (inclusive) and 900° C. (exclusive).    
     
     
         30 . The device according to  claim 23 , wherein 
 the compound containing silicon includes silicon germanium.    
     
     
         31 . The device according to any one of claims  22  to  30 , wherein 
 the semiconductor element includes a transistor, and the portion is at least one portion of a source, drain, and gate of the transistor.  
 
     
     
         32 . The device according to  claim 31 , wherein 
 nickel mono silicide is formed as the nickel-silicon compound.

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