Semiconductor device and method of fabricating the same

Abstract

A semiconductor device having a contact structure that can exhibit superlative step coverage without causing voids or wiring discontinuities, using aluminum or aluminum alloys as a conductive substance for via-holes. A method of fabricating the semiconductor device comprises, for at least one layer of wiring regions above the first wiring region on a semiconductor substrate, the following steps (a) to (f): (a) a step of forming a via-hole in a second interlayer dielectric formed above the first wiring region on a semiconductor substrate; (b) a degassing step for removing gaseous components included within the interlayer dielectric by a heat treatment under reduced pressure and at the substrate temperature of 300° C. to 550° C.; (c) a step of forming a wetting layer on the surface of the interlayer dielectric and the via-hole; (d) a step of cooling the substrate to a temperature of no more than 100° C.; (e) a step of forming a first aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the wetting layer at a temperature of no more than 200° C.; and (f) a step of forming a second aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the first aluminum layer at a temperature of at least 300° C.

What is claimed is:  
     
         1 . A method of fabricating a semiconductor device comprising a semiconductor substrate including semiconductor elements, and multi-layered wiring regions, wherein at least one layer of the wiring regions above the first wiring region on the semiconductor substrate is fabricated using a process comprising the following steps (a) to (f): 
 (a) a step of forming a via-hole in an interlayer dielectric formed above the first wiring region on a semiconductor substrate;    (b) a degassing step for removing gaseous components included within said interlayer dielectric by a heat treatment under reduced pressure and at the substrate temperature of 300° C. to 550° C.;    (c) a step of forming a wetting layer on the surface of said interlayer dielectric;    (d) a step of cooling the substrate to a temperature of no more than 100° C.;    (e) a step of forming a first aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on said wetting layer at a temperature of a first degree C.;    (f) a step of forming a second aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on said first aluminum layer at a temperature of a second degree C.; and wherein the first degree C. is lower than the second degree C.    
     
     
         2 . A method of fabricating a semiconductor device comprising a semiconductor substrate including semiconductor elements; and multi-layered wiring regions, wherein at least one layer of the wiring regions above the first wiring region on the semiconductor substrate is fabricated using a process comprising the following steps (a) to (f): 
 (a) a step of forming an interlayer dielectric formed above the first wiring region on a semiconductor substrate;    (b) a degassing step for removing gaseous components included within said interlayer dielectric by a heat treatment under reduced pressure and at the substrate temperature of 300° C. to 550° C.;    (c) a step of forming a wetting layer on the surface of said interlayer dielectric;    (d) a step of cooling the substrate to a temperature of no more than 100° C.;    (e) a step of forming a first aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on said wetting layer at a temperature of a first degree C.; and    (f) a step of forming a second aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on said first aluminum layer at a temperature of a second degree C.; and wherein the first degree C. is lower than the second degree C.    
     
     
         3 . The method of fabricating a semiconductor device according to  claim 1 , wherein the first degree C. is no more than 200° C. and the second degree C. is at least 300° C.  
     
     
         4 . The method of fabricating a semiconductor device according to  claim 2 , wherein the first degree C. is no more than 200° C. and the second degree C. is at least 300° C.  
     
     
         5 . The method of fabricating a semiconductor device according to  claim 3 , wherein the formation of the aluminum layers in said steps (e) and (f) is provided by a sputtering method.  
     
     
         6 . The method of fabricating a semiconductor device according to  claim 3 , wherein the formation of the aluminum layers in said steps (e) and (f) is provided in the same chamber and in a consecutive manner.  
     
     
         7 . The method of fabricating a semiconductor device according to  claim 3 , wherein said steps (d), (e), and (f) are performed consecutively in the same equipment having a plurality of chambers each maintained under a reduced pressure.  
     
     
         8 . The method of fabricating a semiconductor device according to  claim 3 , wherein the formation of the aluminum layers in said steps (e) and (f) is provided by controlling the temperature of the stage on which said semiconductor substrate is to be mounted.