Methods of split cavity wall plating for an integrated circuit package

Abstract

An electronic package that may include a first bond pad and a second bond pad located on a bond shelf. The bond shelf may have an edge. The package may have a first conductive bus that may be connected to the first bond pad by a first conductive strip that extends along the edge of the bond shelf. The package may also have a second conductive bus that may be connected to the second bond pad by a second conductive strip that extends along the edge of the bond shelf.

What is claimed is:  
     
         1 - 16 . (Cancelled)  
     
     
         17 . (New) A method of forming an integrated circuit package, comprising: 
 providing a package housing having a first plurality of bonding pads located on a first bond shelf, the first bond shelf having a first edge;    forming a first conductive strip along the first edge of the first bond shelf, the first conductive strip wrapping around the edge of the first bond shelf from at least one of the first plurality of bonding pads on the first bond shelf to a first conductor under the first bond shelf; and,    removing a portion of the first conductive strip.    
     
     
         18 . (New) The method as recited in  claim 17 , wherein 
 the first conductive strip is formed by plating a conductive material onto the first edge.    
     
     
         19 . (New) The method as recited in  claim 17 , wherein 
 the first conductor under the first bond shelf is a power bus.    
     
     
         20 . (New) The method as recited in  claim 17 , wherein 
 the first conductor under the first bond shelf is a routing trace.    
     
     
         21 . (New) The method as recited in  claim 17 , wherein 
 the portion of the first conductive strip is removed by 
 drilling a portion of the first bond shelf.  
   
     
     
         22 . (New) The method as recited in  claim 21 , wherein 
 the portion drilled in the first bond shelf is a notch.    
     
     
         23 . (New) The method as recited in  claim 17 , wherein 
 the portion of the first conductive strip is removed by 
 etching away a portion of the first conductive strip of the first bond shelf.  
   
     
     
         24 . (New) The method as recited in  claim 17 , wherein 
 the package housing is provided by 
 forming a first conductive layer on a first dielectric substrate,  
 placing a second dielectric substrate on the first conductive layer of the first dielectric substrate, the second dielectric substrate having a second conductive layer, and  
 etching the second conductive layer to form the first plurality of bonding pads.  
   
     
     
         25 . (New) The method as recited in  claim 24 , wherein 
 the first conductive layer forms the first conductor under the first bond shelf.    
     
     
         26 . (New) The method as recited in  claim 24 , wherein 
 the etching of the second conductive layer to further form a second conductor, and    the package housing has a second plurality of bonding pads located on a second bond shelf, the second bond shelf having a second edge, the package housing is further provided by 
 placing a third dielectric substrate on the second conductive layer of the second dielectric substrate, the third dielectric substrate having a third conductive layer, and  
 etching the third conductive layer to form a second plurality of bonding pads, and  
   the method further includes 
 forming a second conductive strip along the second edge of the second bond shelf, the second conductive strip wrapping around the second edge of the second bond shelf from at least one of the second plurality of bonding pads on the second bond shelf to the second conductor under the second bond shelf.  
   
     
     
         27 . (New) The method as recited in  claim 26 , wherein 
 the second conductive layer forms the second conductor under the second bond shelf.    
     
     
         28 . (New) The method as recited in  claim 26 , wherein 
 the second conductive strip is formed by plating a conductive material onto the second edge.    
     
     
         29 . (New) The method as recited in  claim 26 , wherein 
 the second conductor under the second bond shelf is a power bus.    
     
     
         30 . (New) The method as recited in  claim 26 , wherein 
 the second conductor under the second bond shelf is a routing trace.    
     
     
         31 . (New) A method of forming an integrated circuit package, comprising: 
 providing a package housing having a first bond shelf with a top surface and an inside surface;    forming a conductive material along the inside surface of the first bond shelf, a first portion of the conductive material wrapping around from the inside surface onto the top surface of the first bond shelf to form at least one of a first plurality of bonding pads on the top surface of the first bond shelf; and,    removing a second portion of the conductive material along the inside surface of the bond shelf to form a pair of separate conductive strips along the inside surface of the bond shelf.    
     
     
         32 . (New) The method as recited in  claim 31 , wherein 
 the conductive material is formed along the inside surface by plating a conductive material onto the inside surface.    
     
     
         33 . (New) The method as recited in  claim 31 , wherein 
 the second portion of the conductive material is removed by 
 drilling a portion of the first bond shelf.  
   
     
     
         34 . (New) The method as recited in  claim 33 , wherein 
 the portion drilled in the first bond shelf is a notch.    
     
     
         35 . (New) The method as recited in  claim 31 , wherein 
 the second portion of the conductive material is removed by etching away a portion of the conductive material from the inside surface of the first bond shelf.    
     
     
         36 . (New) A method of forming an integrated circuit package, comprising: 
 providing a package housing having a rectangular bond shelf with a rectangular top surface and an inside surface perpendicular with the top surface, the bond shelf having a first plurality of bonding pads located on the top surface;    forming a conductive material along the side surface of the bond shelf, a first portion of the conductive material wrapping around from the inside surface onto the top surface of the bond shelf to couple to at least one of the first plurality of bonding pads on the top surface of the bond shelf; and,    removing a second portion of the conductive material along the inside surface of the bond shelf to form a pair of separate conductive strips along the inside surface of the bond shelf.    
     
     
         37 . (New) The method as recited in  claim 36 , wherein 
 the conductive material is formed along the inside surface by plating a conductive material onto the inside surface of the bond shelf.    
     
     
         38 . (New) The method as recited in  claim 36 , wherein 
 the second portion of the conductive material is removed by 
 drilling a portion of the bond shelf.  
   
     
     
         39 . (New) The method as recited in  claim 38 , wherein 
 the portion drilled in the bond shelf is a notch.    
     
     
         40 . (New) The method as recited in  claim 36 , wherein 
 the second portion of the conductive material is removed by etching away a portion of the conductive material from the inside of the first bond shelf.